Processing system and device manufacturing method

ABSTRACT

A processing system and a device manufacturing method that can perform manufacturing of an electronic device without stopping the entire manufacturing system, even when the processing state actually implemented on a sheet substrate by a processing device differs from the target processing state. A processing system for sequentially conveying a long, flexible sheet substrate along a length direction to each of a first through a third processing device to form a predetermined pattern on the sheet substrate, wherein the first through the third processing devices implement a predetermined process relating to the sheet substrate according to setting conditions set to each processing device, and when at least one from among the states of the actual processing implemented on the sheet substrate by each of the first through the third processing devices exhibits a processing error relative to a target processing state, changes other setting conditions, separate from the setting conditions exhibiting the processing error, according to the processing error.

RELATED APPLICATIONS

The present application is a divisional application of U.S. applicationSer. No. 15/508,358 filed May 19, 2017, which in turn is a U.S. nationalstage application of PCT/JP2015/075032 filed Sep. 3, 2015. The entiredisclosure of each of these prior applications is incorporated herein byreference.

TECHNICAL FIELD

The present invention relates to a processing system and a devicemanufacturing method for manufacturing electronic devices via aroll-to-roll method.

BACKGROUND ART

In WO 2013/136834, a roll-to-roll method manufacturing system is known,wherein a sheet substrate, supplied from a supply roll on which a sheetsubstrate is wound, is conveyed along a length direction; then, afterpredetermined processing is implemented on the sheet substrate via aplurality of processing devices U1 to Un lined up along the lengthdirection, it is wound up on a collection roll, in order to form apattern of an electronic device (organic EL or a liquid crystal displaypanel) on a flexible long sheet substrate. Specifically, the processingdevice U1 forms a photosensitive functional layer on the surface of thesheet substrate, relating to the flexible sheet substrate pulled outfrom the supply roll; the processing device U2 stably fixes the formedphotosensitive functional layer by heating the sheet substrate. Then,the processing device U3 (exposure device) irradiates ultravioletpatterning light on the photosensitive functional layer; the processingdevice U4 performs developing; the processing device U5 dries the sheetsubstrate by warming.

However, in a roll-to-roll method manufacturing system such as that ofWO 2013/136834, when the state of the processing actually implemented onthe sheet substrate by one of the processing devices U differs from thetarget processing state, for example, when the strength of theillumination light for exposure (laser light or the like) of theprocessing device U3 (exposure device) is not at the target strength, orthe like, the pattern formed on the sheet substrate is not the desiredpattern. Because the pattern formed on this sheet substrate is formed bythe processes of each processing device U1 to Un, it is impossible toascertain which processing device is the cause by simply looking at theformed pattern. Furthermore, in a roll-to-roll method manufacturingsystem, because one long sheet substrate connected in a belt shape iscontinuously conveyed in the length direction, when the processingdevice generating the processing error is ascertained, due to thenecessity of adjustment work and the like for keeping the processingerror within a permissible range, even temporarily stopping theprocessing operation of the ascertained processing device means stoppingthe entire manufacturing system (one continuous manufacturing line),which is inefficient.

SUMMARY OF INVENTION

A first aspect of the present invention is a processing system forsequentially conveying a long, flexible sheet substrate along a lengthdirection to each of a plurality of processing devices to form apredetermined pattern on the sheet substrate, provided with: a firstprocessing device for conveying the sheet substrate in the lengthdirection according to first setting conditions while selectively oruniformly forming a photosensitive thin film on the surface of the sheetsubstrate; a second processing device for conveying the sheet substratein the length direction according to second setting conditions whileirradiating the photosensitive thin film on the surface of the sheetsubstrate with light energy corresponding to the pattern to form alatent image on the photosensitive thin film corresponding to thepattern; a third processing device for conveying the sheet substrate inthe length direction according to third setting conditions while causingthe pattern to appear on the sheet substrate via selective developmentof the photosensitive thin film corresponding to the latent image or viaselective plating on the photosensitive thin film corresponding to thelatent image; and

a control device, which, when at least one from among the states of theactual processing implemented on the sheet substrate by each of thefirst through the third processing devices exhibits a processing errorrelative to a target processing state of each of the first through thethird processing devices, changes other setting conditions, separatefrom the setting conditions exhibiting the processing error from amongthe first through the third setting conditions, according to theprocessing error.

A second aspect of the present invention is a processing system forsequentially conveying a long, flexible sheet substrate along a lengthdirection to each of a plurality of processing devices to form apredetermined conductive pattern on the sheet substrate, provided with:a first processing device for conveying the sheet substrate in thelength direction according to first setting conditions while selectivelyor uniformly forming a predetermined coating layer on the surface of thesheet substrate; a second processing device for conveying the sheetsubstrate in the length direction according to second setting conditionswhile irradiating the coating layer on the surface of the sheetsubstrate with light energy corresponding to the pattern to form areformed portion on the coating layer corresponding to the pattern; athird processing device for conveying the sheet substrate in the lengthdirection according to third setting conditions while forming thepattern by precipitating a conductive material on one of either thereformed portion or the non-reformed portion by performing plating; anda control device, which, when at least one from among the states of theactual processing implemented on the sheet substrate by each of thefirst through the third processing devices exhibits a processing errorrelative to a target processing state of each of the first through thethird processing devices, changes other setting conditions, separatefrom the setting conditions exhibiting the processing error from amongthe first through the third setting conditions, according to theprocessing error.

A third aspect of the present invention is a processing system forsequentially conveying a long, flexible sheet substrate along a lengthdirection to each of a plurality of processing devices to form apredetermined conductive pattern on the sheet substrate, provided with:a first information forming device, provided on a first processingdevice from among the plurality of processing devices, for forming afirst information relating to the processing state implemented on thesheet substrate according to the first setting conditions by the firstprocessing device, or relating to processing error, on a part of thesheet substrate; a second information forming device, provided on asecond processing device that is downstream from the first processingdevice, for forming a second information relating to the processingstate implemented on the sheet substrate according to the second settingconditions by the second processing device or relating to processingerror, on a part of the sheet substrate; an information gatheringdevice, provided on the conveyance path of the sheet substrate, forreading the first information or the second information formed on thesheet substrate and gathering the first information or the secondinformation, and a control device for correcting the second settingconditions as necessary based on the first information read from theinformation gathering device, and correcting the first settingconditions as necessary based on the second information read from theinformation gathering device.

A fourth aspect of the present invention is a device manufacturingmethod for conveying a long, flexible sheet substrate along a lengthdirection while forming a pattern for an electronic device on the sheetsubstrate, including: conveying the sheet substrate through a firstprocessing step, a second processing step, and a third processing step,in that order, to implement mutually differing processes relating to thesheet substrate; depositing a coating layer selectively or uniformly onthe surface of the sheet substrate under first processing conditions setto the first processing step; creating a reformed portion correspondingto the pattern on the coating layer by irradiating energy linescorresponding to the pattern on the coating layer, under secondprocessing conditions set to the second processing step; causing thepattern to appear on the sheet substrate by implementing processing forremoving one of either the reformed portions or the non-reformedportions of the coating layer, or processing for precipitating amaterial for electronic devices on one of either the reformed portionsor the non-reformed portions; and determining the possibility ofchanging at least one of the conditions of the first processingconditions, the second processing conditions, or the third processingconditions, and the possibility of changing the conveying speed of thesheet substrate of at least one of the first processing step, the secondprocessing step, and the third processing step, when the patternappearing on the sheet substrate displays a tendency to fluctuateoutside a permissible range relating to the target shape or dimensions.

A fifth aspect of the present invention is a device manufacturing methodfor conveying a long, flexible sheet substrate along a length directionwhile forming a pattern for an electronic device on the sheet substrate,including: a conveying step for conveying the sheet substrate through afirst processing step and a second processing step, in that order, toimplement mutually differing processes relating to the sheet substrate;depositing a coating layer selectively or uniformly on the surface ofthe sheet substrate under first processing conditions set to the firstprocessing step; creating a reformed portion corresponding to thepattern on the coating layer under second processing conditions set tothe second processing step, and causing the pattern to appear on thesheet substrate by implementing processing for removing one of eitherthe reformed portions or the non-reformed portions of the coating layer,or processing for precipitating a material for electronic devices on oneof either the reformed portions or the non-reformed portions; anddetermining the possibility of changing at least one of the conditionsof the first processing conditions or the second processing conditions,and the possibility of changing the conveying speed of the sheetsubstrate of at least one of the first processing step or the secondprocessing step, when the pattern appearing on the sheet substrateduring the second processing step displays a tendency to fluctuaterelating to the target shape or dimensions, according to the tendency.

A sixth aspect of the present invention is a device manufacturing methodfor conveying a long, flexible sheet substrate along a length directionwhile forming a pattern for an electronic device on the sheet substrate,including: a conveying step for conveying the sheet substrate through afirst processing step and a second processing step, in that order, toimplement mutually differing processes relating to the sheet substrate;depositing a coating layer selectively or uniformly on the surface ofthe sheet substrate and creating a reformed portion corresponding to thepattern on the coating layer by irradiating energy lines correspondingto the pattern on the coating layer under first processing conditionsset to the first processing step, and causing the pattern to appear onthe sheet substrate by implementing processing for removing one ofeither the reformed portions or the non-reformed portions of the coatinglayer, or processing for precipitating a material for electronic deviceson one of either the reformed portions or the non-reformed portionsunder second processing conditions set to the second processing step;and determining the possibility of changing at least one of theconditions of the first processing conditions or the second processingconditions, and the possibility of changing the conveying speed of thesheet substrate of at least one of the first processing step or thesecond processing step, when the pattern appearing on the sheetsubstrate displays a tendency to fluctuate relating to the target shapeor dimensions.

A seventh aspect of the present invention is a device manufacturingmethod for conveying a long, flexible sheet substrate along a lengthdirection while forming a pattern for an electronic device on the sheetsubstrate, including:

a first processing step for sending the sheet substrate in the lengthdirection at a predetermined conveyance speed while irradiating thecoating layer formed on the surface of the sheet substrate with energylines corresponding to the pattern under first setting conditions tocreate reformed portions and non-reformed portions on the coating layer,corresponding to the pattern; a second processing step for sending thesheet substrate that has passed through the first processing step in thelength direction at a predetermined conveyance speed while causing thepattern to appear on the sheet substrate by implementing processing forremoving one of either the reformed portions or the non-reformedportions of the coating layer, or processing for precipitating amaterial for electronic devices on one of either the reformed portionsor the non-reformed portions under second processing conditions; anddetermining the possibility of changing at least one of the conditionsof the first processing conditions or the second processing conditions,and the possibility of changing the conveying speed of the sheetsubstrate of at least one of the first processing step or the secondprocessing step, when the pattern appearing on the sheet substratedisplays a tendency to fluctuate outside a permissible range relating tothe target shape or dimensions.

An eighth aspect of the present invention is a device manufacturingmethod for conveying a long, flexible sheet substrate along a lengthdirection while forming a pattern for an electronic device on the sheetsubstrate, including: a conveying step for sending the sheet substratein a length direction through a first processing device and a secondprocessing device, in that order, to implement mutually differingprocesses relating to the sheet substrate;

a first processing step for implementing processing on the substrateunder first processing conditions set to the first processing device; asecond processing step for implementing processing on the substrate thathas passed through the first processing step and causing the pattern toappear on the substrate under second processing conditions set to thesecond processing device; a sensing step for sensing whether the qualityof the pattern that has appeared on the substrate has changed relatingto the target; and

-   -   a determining step for determining the possibility of changing        at least one of either the first processing conditions or the        second processing conditions when the quality of the pattern        displays a tendency to decline.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic configuration view illustrating a schematicconfiguration of a device manufacturing system according to a firstembodiment.

FIG. 2 is a view illustrating a configuration of a processing devicewhich deposits a photosensitive functional layer on the substrateaccording to the device manufacturing system in FIG. 1.

FIG. 3 is a view illustrating a configuration of a pattern formingdevice that performs substrate storage and exposure according to thedevice manufacturing system in FIG. 1.

FIG. 4 is a view illustrating an alignment microscope which detects aspot light scan line scanned on the substrate by the exposure head inFIG. 3 and an alignment mark formed on the substrate.

FIG. 5 is a view illustrating a configuration of a drawing unit thatconfigures the exposure head in FIG. 4.

FIG. 6 is a view illustrating a configuration of a processing device forperforming development processing, from within the device manufacturingsystem in FIG. 1.

FIG. 7 is a flow chart illustrating the operation of a devicemanufacturing system for determining a processing device that isgenerating a processing error exceeding the permissible range.

FIG. 8 is a flow chart illustrating the operation of a devicemanufacturing system when a processing error is generated in aprocessing device that is an exposure device.

FIG. 9 is a flow chart illustrating the operation of a devicemanufacturing system when a processing error is generated in aprocessing device other than a processing device that is an exposuredevice.

FIG. 10 is a schematic configuration view illustrating a schematicconfiguration of a device manufacturing system according to a secondembodiment.

FIG. 11 is a view illustrating an example of information formed on asubstrate by the information formation device in FIG. 10.

FIG. 12 is a view illustrating a configuration of a processing unit ofvariation 1.

FIG. 13 is a view illustrating a configuration of a processing unit ofvariation 2.

DESCRIPTION OF EMBODIMENTS

Appropriate embodiments are provided concerning the processing systemand device manufacturing method according to the modes of the presentinvention, and are described in detail below with reference to theattached drawings. Note that the modes of the present invention are notlimited to these embodiments, but also include modes with variouschanges or improvements added thereto. In other words, in theconstituent elements described below, components that are substantiallythe same, or also components that a person skilled in the art couldeasily conceive are included; components described below can beappropriately combined. Also, within the scope of what does not deviatefrom the intent of the present invention, various component omissions,substitutions, or changes are possible.

First Embodiment

FIG. 1 is a schematic configuration view illustrating a schematicconfiguration of a device manufacturing system (processing system) 10according to a first embodiment. The device manufacturing system 10illustrated in FIG. 1, for example, is a line (flexible displaymanufacturing line) for manufacturing a flexible display as anelectronic device. As a flexible display, for example, there are organicEL displays, liquid crystal displays, and the like. This devicemanufacturing system 10 is of a roll-to-roll method, which sends out asubstrate P from a supply roll FR1 that winds a flexible sheet substrate(hereinafter, substrate) P in a roll shape, and after each process forthe substrate P, which has been sent out, is implemented continuously,the processed substrate P is wound up onto a collection roll FR2. Thissubstrate P has a belt-shaped shape wherein the substrate P movementdirection (conveying direction) is the long length, and the widthdirection is the short length. The device manufacturing system 10 of thefirst embodiment illustrates an example of a substrate P which is afilm-shaped sheet, sent out from the supply roll FR1, and the substrateP sent out from the supply roll FR1 will at least pass throughprocessing devices PR1, PR2, PR3, PR4, PR5, until it is wound up ontothe collection roll FR2. In FIG. 1 is an orthogonal coordinate systemwherein the X direction, Y direction, and Z direction are orthogonal.The X direction is the conveying direction of the substrate P in thehorizontal plane, and is the direction that connects the supply roll FR1and the collection roll FR2. The Y direction is a direction orthogonalto the X direction in a horizontal plane, and is the width direction ofthe substrate P. The Z direction is the direction orthogonal to the Xdirection and the Y direction (vertical direction).

This processing device PR1 is a surface processing device that performsprocessing steps for plasma surface processing relating to the substrateP while the substrate P, conveyed from a supply roll FR1, is conveyedalong the conveying direction (+X direction) in the length direction.The surface of the substrate P is reformed by this processing devicePR1, and the adhesive property of the photosensitive functional layer isimproved. The processing device (first processing device) PR2 is adeposition device that performs a processing step (first processingstep) for photosensitive functional layer deposition processing whilethe substrate P conveyed from the processing device PR1 is conveyed inthe conveying direction (+X direction). By the processing device PR2selectively or uniformly applying the photosensitive functional liquidon the surface of substrate P, the photosensitive functional layer(photosensitive thin film, coating layer, cover layer) is selectively oruniformly formed on the surface of the substrate P. Furthermore, theprocessing device (second processing device) PR3 is an exposure devicethat performs a processing step (second processing step) for exposureprocessing while conveying the substrate P, sent from the processingdevice PR2, having a photosensitive functional layer formed on thesurface thereof in the conveying direction (+X direction). Theprocessing device PR3 irradiates light patterns on the surface of thesubstrate P (photosensitive surface) according to patterns for displaypanel circuits or wiring and the like. This causes a latent image(reformed portion) corresponding to the pattern to be formed on thephotosensitive functional layer. The processing device (third processingdevice) PR4 is a developing device that performs a processing step(third processing step) for developing processing of the wet type whilethe substrate P conveyed from the processing device PR3 is conveyed inthe conveying direction (+X direction). This causes the pattern to beformed on the photosensitive functional layer according to the latentimage. The processing device PR5 is an etching device that performs aprocessing step for etching processing with the photosensitivefunctional layer with patterns formed thereon as a mask while thesubstrate P is conveyed from the processing device PR4 in the conveyingdirection (+X direction). This causes the pattern to appear on thesubstrate P.

Between the processing device PR2 and the processing device PR3, astorable first storage device (first storage part) BF1 is provided overa predetermined length of substrate P; between the processing device PR3and the processing device PR4, a storable second storage device (secondstorage part) BF2 is provided over a prescribed length of the substrateP. Therefore, the substrate P sent out from the processing device PR2through the first storage device BF1 is taken into the processing devicePR3, and the processing device PR3 sends out the substrate P through thesecond storage device BF2 to the processing device PR4. Processingdevices PR1 to PR5 are disposed on the manufacturing plant installationsurface. This installation surface can be a surface on installationstands or on the floor. The processing device PR3, the first storagedevice (storage device) BF1, and the second storage device (storagedevice) BF2 configure a pattern formation device 12.

The upper control device 14 controls each processing device PR1 to PR5,the first storage device BF1, and the second storage device BF2 of thedevice manufacturing system 10. This upper control device 14 includes acomputer and a recording medium with the program recorded thereon; bythe computer executing the program stored on the storage medium, itfunctions as the upper control device of the present first embodiment.Note that the device manufacturing system 10 of the present firstembodiment is provided with five processing device PRs, but it issufficient if it is provided with two or more processing device PRs. Forexample, the device manufacturing system of the present first embodimentmay be provided with a total of two processing device PRs, which are theprocessing devices PR2, PR3, or the processing devices PR4, PR5; it mayalso be provided with a total of 3 processing device PRs, which are theprocessing devices PR2 to PR4.

The processing target of the device manufacturing system 10, which isthe substrate P, will be described next. As for the substrate P, forexample, a resin film, foils made from metals such as stainless steel oralloys, and the like are used. As materials for a resin film, forexample, a material containing one or two or more from among thefollowing may be used: polyethylene resin, polypropylene resin,polyester resin, ethylene-vinyl copolymer resin, polychloride vinylresin, cellulose resin, polyamide resin, polyimide resin, polycarbonateresin, polystyrene resin, vinyl acetate resin. Further, the thicknessand hardness (Young's Modulus) of the substrate P should be a range thatdoes not produce creases or irreversible wrinkles from the buckling ofthe substrate P. When making a flexible display panel, touch panel,color filter, electromagnetic wave blocking filter and the like as anelectronic device, a resin sheet of PET (polyethylene terephthalate) orPEN (polyethylene naphthalate) and the like with a thickness of 25 μm to200 μm is used.

For example, in order for the deformation amount due to heat receivedfrom each process being implemented on substrate P to be substantiallydisregarded, it is desirable to select a substrate P with a thermalexpansion coefficient that is not remarkably large. Further, on theresin film that acts as the base, when inorganic fillers such astitanium oxide, zinc oxide, alumina, silicone oxide, and the like aremixed in, the thermal expansion coefficient can be lowered as well.Further, substrate P may be a single layer body of ultra-thin glass witha thickness of approximately 100 μm manufactured by a float process andthe like; it may also be a stacked layer body of this ultra-thin glassbonded with the resin film described above or bonded with a metal layer(foil) and the like of aluminum, copper and the like.

Incidentally, the flexibility of the substrate P refers to a propertysuch that even if a force of approximately its own weight is added,there will be no shearing or fracturing, and that the substrate P can bebent. Further, included in flexibility is a property such that it willcurve under a force of approximately its own weight. Further, the degreeof flexibility changes based on the environment and the like, such asthe material of the substrate P, size, thickness, the layer structuredeposited on the substrate P, temperature, humidity, and the like. Inany case, if the substrate P can be conveyed smoothly without creasingfrom buckling and without damage (tears or breaks generated) when thesubstrate P is correctly wound on members for conveying directionconversion for each type of conveying roller, rotation drum, and thelike provided in the conveying path within the device manufacturingsystem 10 according to the present embodiment, it can be said to bewithin the scope of flexibility.

A substrate P configured in this manner will be the supply roll FR1 bybeing wound into a roll shape, and this supply roll FR1 is installed inthe device manufacturing system 10. The device manufacturing system 10installed with the supply roll FR1 repeatedly executes each type ofprocessing for manufacturing an electronic device in relation to thesubstrate P sent out from the supply roll FR1. Because of this, thepost-process substrate P is in a state wherein several electronicdevices are connected. In other words, the substrate P sent out from thesupply roll FR1 is a substrate for multiple printing.

An electronic device is configured with a plurality of pattern layers(layers with patterns formed) stacked together; one pattern layer isproduced by passing through at least each of the processing devices PR1to PR5 of the device manufacturing system 10, so in order to produce anelectronic device, the processing of each processing device PR1 to PR5of the device manufacturing system 10 illustrated in FIG. 1 is requiredto be performed at least two times.

The post-process substrate P is collected as the collection roll FR2 bybeing wound into a roll shape. The collection roll FR2 may be installedin a dicing device, which is not illustrated. The dicing deviceinstalled in the collection roll FR2 separates (dices) the post-processsubstrate P for each electronic device, thereby making it into aplurality of electronic devices. The dimensions of substrate P, forexample, the width direction (direction of the short length) dimensionsare approximately from 10 cm to 2 m, and the length direction (directionof the long length) dimensions are 10 m or greater. Note that thedimensions of substrate P are not limited to the dimensions describedabove.

FIG. 2 is a view illustrating the configuration of the processing devicePR2. The processing device PR2 is provided with guide rollers R1, R2; anedge position controller EPC1; tension adjustment rollers RT1, RT2; arotation drum DR1; drive rollers NR1, NR2; alignment microscopes AU; adie coating head DCH; an ink jet head IJH; a dryer device 16; and alower control device 18. The substrate P is conveyed by the rotationdrum DR1 and the drive rollers NR1, NR2.

The guide roller R1 guides the substrate P conveyed to the processingdevice PR2 from the processing device PR1 to the edge positioncontroller EPC1. The edge position controller EPC1 has a plurality ofrollers, and the substrate P is conveyed toward the guide roller R2while the substrate P is moved in the width direction to correct theposition of the substrate P in the width direction so that the positionsof both ends (edges) of the width direction of the substrate P conveyedin a state of having a predetermined tension applied thereto will fallin a range (permissible range) of approximately from ±ten μm to severaltens of μm in relation to the target position, so that there is nofluctuation in the substrate P width direction. The guide roller R2guides the substrate P, which has been conveyed thereto, to the rotationdrum DR1. The edge position controller EPC1 adjusts the position in thewidth direction of the substrate P so that the length direction of thesubstrate P conveyed into the rotation drum DR1 is orthogonal to theaxial direction of a central axis AX1 of the rotation drum DR1.

The rotation drum DR1 has the central axis AX1 extending in the Ydirection and an outer peripheral surface, which has a cylinder shapehaving a fixed radius from the central axis AX1; the rotation drum DR1supports a portion of the substrate P along the outer peripheral surface(circumferential surface) in the length direction while conveying thesubstrate P in the +X direction by rotating about the central axis AX1.The rotation drum DR1 supports, on the circumferential surface, theregion (part) on the substrate P imaged by the alignment microscopes AU,and the region (part) on the substrate P that is processed by the diecoating head DCH or the ink jet head IJH.

The alignment microscopes AU (AU1 to AU3) are for detecting thealignment marks (Ks1 to Ks3) formed on the substrate P illustrated inFIG. 4, and three are provided along the Y direction. The detectionregions of the alignment microscopes AU (AU1 to AU3) are disposed in asingle line so that they align in the Y direction on the circumferentialsurface of the rotation drum DR1. The alignment marks Ks (Ks1 to Ks3)are standard marks to relatively position match (perform alignment) theelectronic device region (device formation region) W serving as thephotosensitive region on the substrate P formed into an electronicdevice, and the substrate P. The alignment marks Ks (Ks1 to Ks3) are,along with being formed in regular intervals along the length directionof the substrate P on both ends of the width direction of the substrateP, formed between the electronic device region W formed by the devicesaligned along the length direction of the substrate P, and in the middleof the width direction of the substrate P.

The alignment microscopes AU (AU1 to AU3) project illumination light foralignment on the substrate P, and, by imaging that reflected light withimaging elements such as CCD or CMOS, detect the alignment marks Ks (Ks1to Ks3). In other words, the alignment microscopes AU1 image thealignment mark Ks1 formed on the edge side of the +Y direction side ofthe substrate P existing within the detection region (imaging region) ofthe alignment microscope AU1. The alignment microscope AU2 images thealignment mark Ks2 formed on the edge of the −Y direction side of thesubstrate P existing in the detection region of the alignment microscopeAU2. The alignment microscope AU3 images the alignment mark Ks3 formedin the middle of the width direction of the substrate P existing withinthe detection region of the alignment microscope AU3. The image dataimaged by the alignment microscopes AU (AU1 to AU3) is sent to the lowercontrol device 18, and the lower control device 18 calculates (detects)the position of the alignment marks Ks (Ks1 to Ks3) on the substrate Pbased on the image data. The size of the detection regions of thealignment microscopes AU (AU1 to AU3) on the substrate P are setaccording to the size and the alignment precision of the alignment marksKs (Ks1 to Ks3), but are a size of approximately 100 to 500 μm.

As illustrated in FIG. 4, the alignment marks Ks (Ks1 to Ks3) foraccurately detecting the position of the substrate P are generallyprovided in the outer peripheral portion of the device formation regionW, but it does not necessarily have to be the outer peripheral portion,and may be provided in a blank portion where a circuit pattern for thedevice does not exist, even if it is within the device formation regionW. Further, an alignment system may be used wherein patterns (partialpatterns such as an image region, wiring portion, electrode portion,terminal portion, or via hole) formed in specific positions from among apart of the circuit patterns formed in the device formation region Wthemselves are image-recognized as alignment marks to detect position.

The die coating head DCH broadly and uniformly applies thephotosensitive functional fluid in relation to the substrate P. The inkjet head IJH selectively applies the photosensitive functional fluid inrelation to the substrate P. The die coating head DCH and the ink jethead IJH apply the photosensitive functional fluid to the substrate Pbased on the position of the alignment marks Ks (Ks1 to Ks3) on thesubstrate P detected by using the alignment microscopes AU (AU1 to AU3).The die coating head DCH and the ink jet head IJH apply thephotosensitive functional fluid to the electronic device region W. Thedie coating head DCH and the ink jet head IJH are provided on thedownstream side (+X direction side) of the conveying direction of thesubstrate P in relation to the alignment microscopes AU (AU1 to AU3),and the ink jet head IJH is provided on the downstream side (+Xdirection side) of the conveying direction of the substrate P inrelation to the die coating head DCH. A plurality of the ink jet headIJH is provided along the conveying direction (+X direction) of thesubstrate P. The region on the substrate P with photosensitivefunctional fluid applied by the die coating head DCH and the ink jethead IJH is supported by the circumferential surface of the rotationdrum DR1.

The dryer device 16 is provided on the downstream side (+X directionside) of the conveying direction of the substrate P in relation to thedie coating head DCH and the ink jet head IJH, and forms aphotosensitive functional layer on the substrate P by drying thephotosensitive functional fluid on the substrate P applied by the diecoating head DCH and the ink jet head IJH. The dryer device 16 removesthe solute (solvent or water) included in the photosensitive functionalfluid by blowing air for drying such as hot air or dry air to dry thephotosensitive functional fluid.

A traditional photosensitive functional fluid is photoresist, but as formaterials that do not require developing processing, there arephotosensitive silane coupling agents (SAM) wherein the hydrophobic orhydrophilic properties of portions irradiated with ultraviolet rays arereformed, or photosensitive reducing agents wherein a plating reductiongroup is exposed in the portions irradiated with ultraviolet rays. Whena photosensitive silane coupling agent is used as a photosensitivefunctional fluid, the pattern portion exposed to ultraviolet rays on thesubstrate P are reformed from hydrophobic to hydrophilic. This causes apattern layer to be able to be formed by selectively applying aconductive ink (an ink containing conductive nano-particles such assilver or copper) or a fluid body containing semiconductor material, andthe like. When using a photosensitive reducing agent as a photosensitivefluid, the pattern portion on the substrate P exposed to ultravioletrays is reformed, exposing a plating reduction group. This causes apattern layer to form (precipitate) from palladium by immersing thesubstrate P in plating fluid including palladium ions and the like for aset time, immediately after exposure. This sort of plating processing isan additive (additive) process, but other than that, when assuming anetching processing as a subtractive (subtractive) process, the substrateP sent by the processing device PR3 may have PET or PEN as a basematerial with a metallic film such as aluminum (Al) or copper (Cu)deposited entirely or selectively on the surface, and furthermore, itmay be laminated with the photo resistor layer thereon. In the presentfirst embodiment, photoresist is used as the photosensitive functionallayer.

In the dryer device 16, a film thickness measuring device 16 a thatmeasures the film thickness of the photosensitive functional layerformed on the substrate P is provided. This film thickness measuringdevice 16 a measures the contact or non-contact film thickness throughan electromagnetic method, an overcurrent method, an overcurrent phasemethod, a fluorescent X-ray method, an electric resistance method, a βwave back scatter method, a magnetic method, an ultra-sonic wave method,and the like. The substrate P with a photosensitive functional layerformed thereon is guided to the drive roller NR1 by the dryer device 16.The drive roller NR1 guides the substrate P to the drive roller NR2 byrotating while sandwiching both sides of the substrate P. The driveroller NR2 supplies the substrate P conveyed by the drive roller NR1 tothe first storage device BF1 by rotating while sandwiching both sides ofthe substrate P. The tension adjustment roller RT1 is biased in the −Zdirection, and applies a predetermined tension to the substrate Pconveyed by the rotation drum DR1. The tension adjustment roller RT2 isbiased in the −X direction, and applies a predetermined tension to thesubstrate P conveyed by the drive roller NR2. The drive roller NR1, NR2,and the rotation drum DR1, which convey the substrate P, rotate from theapplied rotational torque from a rotation drive source (omitted from thefigure) having a motor or speed reducer and the like that is controlledby the lower control device 18. The conveying speed of the substrate Pin the processing device PR2 is determined by the rotation speed of thedrive roller NR1, NR2, and the rotation drum DR1. Further, the rotationspeed signal (the substrate P conveying speed signal) sent from theencoder, which is not illustrated, and which is provided on the driveroller NR1, NR2, the rotation drum DR1, and the like is sent to thelower control device 18.

The lower control device 18 follows the control of the upper controldevice 14, and controls each part of the processing device PR2. Forexample, the lower control device 18 controls the conveying speed of thesubstrate P conveyed within the processing device PR2, the edge positioncontroller EPC1, the die coating head DCH, the ink jet head IJH, and thedryer device 16. Also, the lower control device 18 outputs, to the uppercontrol device 14, the position information of the alignment marks Ks(Ks1 to Ks3) on the substrate P detected by the alignment microscopes AU(AU1 to AU3), film thickness information detected by the film thicknessmeasuring device 16 a, rotation speed information (conveying speedinformation of the substrate P within the processing device PR2), andthe like. The lower control device 18 includes a computer and arecording medium with a program recorded thereon, and by executing theprogram recorded on the recording medium, the computer functions as thelower control device 18 of the present first embodiment. This lowercontrol device 18 may be a part of the upper control device 14, and maybe a separate control device from the upper control device 14.

FIG. 3 is a view illustrating the configuration of a pattern formationdevice 12. The first storage device BF1 of the pattern formation device12 has a drive roller NR3, NR4, and a plurality of dancer rollers 20.The drive roller NR3 rotates while sandwiching both surfaces of thesubstrate P sent by the processing device PR2, and conveys the substrateP into the first storage device BF1. The drive roller NR4 rotates whilesandwiching both surfaces of the substrate P, and conveys the substrateP in the first storage device BF1 to the processing device PR3. Theplurality of the dancer rollers 20 is provided between the drive rollerNR3 and the drive roller NR4, and applies a predetermined tension to thesubstrate P. The plurality of dancer rollers 20 is able to move in the Zdirection; the upper (+Z direction side) dancer roller 20 (20 a) isbiased toward the +Z direction side, and the lower (−Z direction side)dancer roller 20 (20 b) is biased toward the −Z direction side. Thisdancer roller 20 a and the dancer roller 20 b are alternately disposedin relation to the X direction.

If the conveying speed of the substrate P conveyed into the firststorage device BF1 becomes comparatively fast in relation to theconveying speed of the substrate P conveyed out from the first storagedevice BF1, the length (storage length) of the substrate P stored by thefirst storage device BF1 increases. If the storage length of the firststorage device BF1 becomes longer, the dancer roller 20 a moves in the+Z direction, and the dancer roller 20 b moves in the −Z direction bythe bias force. This makes it possible for the substrate P to be storedwith a predetermined length, in a state where the substrate P has apredetermined tension applied thereto, even when the storage volume ofthe first storage device BF1 has increased. Conversely, if the conveyingspeed of the substrate P conveyed into the first storage device BF1becomes comparatively slow in relation to the conveying speed of thesubstrate P conveyed out of the first storage device BF1, the length(storage length) of the substrate P stored by the first storage deviceBF1 decreases. If the storage length of the first storage device BF1decreases, the dancer roller 20 a moves in the −Z direction, and thedancer roller 20 b moves in the +Z direction, against the bias force. Inany case, the first storage device BF1 can store the substrate P in astate where a predetermined tension is applied to the substrate P. Thedrive roller NR3, NR4 rotate due to applied rotational torque from arotation drive source (omitted from the figure) having a motor or speedreducer and the like, being controlled by the lower control device 24.The conveying speed of the substrate P conveyed into the first storagedevice BF1 is determined by the rotation speed of the drive roller NR3;the conveying speed of the substrate P conveyed out from the firststorage device BF1 is determined by the rotation speed of the driveroller NR4. Further, the rotation speed signal sent from the encoder,which is not illustrated in the drawings, and is provided on the driveroller NR3, NR4, is sent by the lower control device 24 of the patternformation device 12.

The second storage device BF2 of the pattern formation device 12 has adrive roller NR5, NR6 and a plurality of dancer rollers 22. The driveroller NR5 rotates while sandwiching both surfaces of the substrate Psent from the processing device PR3, and conveys the substrate P intothe second storage device BF2. The drive roller NR6 conveys out thesubstrate P within the second storage device BF2 to the processingdevice PR4 while sandwiching both surfaces of the substrate P. Theplurality of the dancer roller 22 is provided between the drive rollerNR5 and the drive roller NR6, and applies a predetermined tension inrelation to the substrate P. The plurality of dancer rollers 22 is ableto move in the Z direction; the upper (+Z direction side) dancer roller22 (22 a) is biased in the +Z direction, and the lower (−Z directionside) dancer roller 22 (22 b) is biased in the −Z direction. This dancerroller 20 a and the dancer roller 20 b are alternately disposed inrelation to the X direction. By having such configuration, the secondstorage device BF2 is able to store the substrate P in a condition witha predetermined tension applied to the substrate P, similar to the firststorage device BF1. Note that the configuration of the first storagedevice BF1 and the second storage device BF2 are identical. The driveroller NR5, NR6 rotate due to applied rotational torque from a rotationdrive source (not illustrated) having a motor or speed reducer and thelike that is controlled by the lower control device 24. The conveyingspeed of the substrate P conveyed into the second storage device BF2 isdetermined by the rotation speed of the drive roller NR5; the conveyingspeed of the substrate P conveyed out from the second storage device BF2is determined by the rotation speed of the drive roller NR6. Further,the rotation speed signal sent from the encoder, which is notillustrated in the drawings, and is provided by the drive roller NR5,NR6, is sent by the lower control device 24.

The processing device PR3 of the pattern formation device 12 is a directdrawing-type exposure device EX that does not use a mask, which is whatis known as a luster scanner-type exposure device, wherein a lightpattern is irradiated according to patterns for circuits or wiring andthe like for a display, in relation to the substrate P supplied from theprocessing device PR2 via the first storage device BF1. Examples of apattern for circuits or wiring for a display include a TFT sourceelectrode or a drain electrode for configuring a display and a patternfor wiring and the like belonging thereto, or a TFT gate electrode and apattern for wiring and the like belonging thereto. While conveying thesubstrate P in the X direction, the processing device PR3 performsdrawing exposure of the light pattern on the surface (photosensitivesurface) of the substrate P through high speed alteration (on/off) ofspotlight strength according to the pattern data (drawing data) whileperforming a 1-dimensional scan of the spotlight of the laser light LBfor exposure in a predetermined scan direction (Y direction) on thesubstrate P. In other words, with conveying in the +X direction of thesubstrate P (secondary scan), and scanning (primary scan) towards thespotlight scan direction (Y direction), the spotlight is scanned in twodimensions on the substrate P, and light energy (energy line)corresponding to the pattern in the substrate P is irradiated. Thiscauses a latent image (reformed portion) corresponding to apredetermined pattern to be formed on the photosensitive functionallayer. This pattern data may be recorded in the recording medium of thelower control device 24 of the pattern formation device 12, or it may berecorded in the recording medium of the upper control device 14.

The processing device PR3 is provided with a conveying part 30, a lightsource device 32, a light induction optical system 34, and an exposurehead 36. The conveying part 30 conveys the substrate P, conveyed fromthe processing device PR2 via the first storage device BF1, towards theprocessing device PR4. The conveying part 30 has, along the substrate Pconveying direction and in order from the upstream side (−X direction),an edge position controller EPC2, a guide roller R3, a tensionadjustment roller RT3, a rotation drum DR2, a tension adjustment rollerRT4, and an edge position controller EPC3.

The edge position controller EPC2 has a plurality of rollers, similar tothe edge position controller EPC1; the substrate P is moved in the widthdirection to correct the position of the substrate P in the widthdirection so as to keep the positions of both ends (edges) of the widthdirection of the substrate P in a range (permissible range) ofapproximately ±ten μm to several tens of μm in relation to the targetposition so that there is no fluctuation in the substrate P widthdirection, while the substrate P is conveyed toward the rotation drumDR2. The edge position controller EPC2 adjusts the position in the widthdirection of the substrate P so that the length direction of thesubstrate P conveyed into the rotation drum DR2 is orthogonal to theaxial direction of a central axis AX2 of the rotation drum DR2. Theguide roller R3 guides the substrate P sent out from the edge positioncontroller EPC2 to the rotation drum DR2.

The rotation drum DR2 has the central axis AX2 extending in the Ydirection and an outer peripheral surface, which has a cylinder shapehaving a fixed radius from the central axis AX2; the rotation drum DR2supports a portion of the substrate P along the outer peripheral surface(circumferential surface) in the length direction while conveying thesubstrate P in the +X direction by rotating with the central axis AX2 asits center. The rotation drum DR2 supports on the circumferentialsurface the part on the substrate P with a pattern exposed.

The edge position controller EPC 3 has a plurality of rollers, similarto the edge position controller 2; the substrate P is moved in the widthdirection to correct the position of the substrate P in the widthdirection so as to keep the positions of both ends (edges) of the widthdirection of the substrate P in a range (permissible range) ofapproximately ±ten μm to several tens of μm in relation to the targetposition so that there is no fluctuation in the substrate P widthdirection, while the substrate P is conveyed toward the processingdevice PR4. The tension adjustment rollers RT3, RT4 are biased in the −Zdirection, and apply a predetermined tension to the substrate Psupported by and wound on the rotation drum DR2. The rotation drum DR2rotates due to applied rotational torque from a rotation drive source(omitted from the figure) having a motor or speed reducer and the likethat is controlled by the lower control device 24. The conveying speedof the substrate P in the processing device PR3 is determined by therotation speed of the rotation drum DR2. Further, the rotation speedsignal sent from the encoder, which is not illustrated in the drawings,and is provided on the rotation drum DR2 and the like, is sent by thelower control device 24.

The light source device 32 has a laser light source, and emits anultraviolet ray laser light (irradiation light, exposure beam) LB usedin exposure. The laser light LB may be an ultraviolet ray light having apeak wavelength in a wavelength band of 370 nm or less. The laser lightLB may be pulse light generated with a light-generation frequency Fs.The laser light LB emitted by the light source device 32 is guided bythe light induction optical system 34, and in addition to being incidentto the exposure head 36, it is incident to the strength sensor 37. Thestrength sensor 37 is a sensor that detects the strength of the laserlight LB.

The light source head 36 is provided with a plurality of drawing units U(U1 to U5), each with the laser light LB from the light source device 32being incident thereunto. In other words, the laser light LB from thelight source 32 is guided by a light induction optical system 34 havinga reflective mirror or beam splitter and the like, and is incident to aplurality of drawing units U (U1 to U5). The exposure head 36 performsdrawing exposure of patterns on a single portion of the substrate Psupported by the circumferential surface of the rotation drum DR2,through a plurality of drawing units U (U1 to U5). The exposure head 36has a plurality of exposure units U (U1 to U5) with the sameconfiguration, and is what is known as a multi-beam type exposure head36. The drawing units U1, U3, U5 are disposed on the upstream side (−Xdirection side) of the conveying direction of the substrate P inrelation to the central axis AX2 of the rotation drum DR2; the drawingunits U2, U4 are disposed on the downstream side (+X direction side) ofthe conveying direction of the substrate P in relation to the centralaxis AX2 of the rotation drum DR2.

Each drawing unit U causes the incident laser light LB to converge onthe substrate P to make it a spotlight, and scans the spotlight alongthe scanning line. The scan line L of each drawing unit U, asillustrated in FIG. 4, is not mutually separated in relation to the Ydirection (width direction of the substrate P), but is set to be joinedtogether. In FIG. 4, the scan line L of the drawing unit U1 is expressedas L1, and the scan line L of the drawing unit U2 is expressed as L2.Similarly, the scan lines L of the drawing units U3, U4, U5 areexpressed as L3, L4, L5. This allows each drawing unit to be allotted ascanning region so that the entire width direction of the electronicdevice region (exposure region) W is covered by all of the drawing unitsU1 to U5. Note that, for example, if the drawing width (length of thescan line L) of the Y direction of a drawing unit U is approximatelyfrom 20 to 50 mm, the width of the drawable Y direction will be widenedby approximately from 100 to 250 mm by disposing the three odd-numbereddrawing units U1, U3, U5 and the two even-numbered drawing units U2, U4,being a total of five drawing units U, in the Y direction.

The drawing unit U is a known technology, as is disclosed in WO2013/146184 (see FIG. 36); the drawing unit U will be described simplyusing FIG. 5. Note that each drawing unit U (U1 to U5) has the sameconfiguration, so only the drawing unit U2 is described, and adescription of the other drawing units U is omitted.

As is illustrated in FIG. 5, the drawing unit U2, for example, has acondensing lens 50, an optical element for drawing (optical modulationelement) 52, an absorber 54, a collimating lens 56, a reflective mirror58, a cylindrical lens 60, a reflective mirror 64, a polygon mirror(light scanning member) 66, a reflective mirror 68, an f-θ lens 70, anda cylindrical lens 72.

The laser light LB incident to the drawing unit U2 progresses from theupper direction of a vertical direction to the lower direction (−Zdirection), and is incidental to the optical element for drawing 52 viathe condenser lens 50. The condenser lens 50 causes the laser light LBincident to the optical element for drawing 52 to condense (converge) sothat it becomes the beam waist within the optical element for drawing52. The optical element for drawing 52 has transparency in relation tothe laser light LB, and, for example, an acoustic optical modulatorelement (AOM: Acousto-Optic Modulator) is used.

When the drive signal (high frequency signal) from the lower controldevice 24 is in the off state, the optical element for drawing 52penetrates the incidental laser light LB in the absorber 54, and whenthe drive signal (high frequency signal) from the lower control device24 is in the on state, the optical element for drawing 52 refracts theincidental laser light LB and faces towards the reflective mirror 58.The absorber 54 is a light trap that absorbs the laser light LB in orderto suppress the leakage of the laser light LB to external parts. Thisallows switching of the laser light LB to face the reflective mirror 58or to face the absorber 54 by high speed on/off of the drive signal(ultrasonic wave frequency) for drawing that should be impressed on theelement for drawing 52, according to the pattern data (white black).This means that when looking above the substrate P, the strength of thelaser light LB (spot light SP) reaching the photosensitive surface canbe modulated at a high speed to either a high level or a low level (forexample, level zero) according to the pattern data.

The collimating lens 56 makes the laser light LB that goes toward thereflective mirror 58 from the optical element for drawing 52 intoparallel light. The reflective mirror 58 reflects the incidental laserlight LB in the −X direction, and irradiates the reflective mirror 64via the cylindrical lens 60. The reflective mirror 64 irradiates thepolygon mirror 66 with the incidental laser light LB. The polygon mirror(rotating multi-surfaced mirror) 66 continuously changes the reflectionangle of the laser light LB by rotating, and scans the position of thelaser light irradiated on the substrate P in the scanning direction (thesubstrate P width direction). The polygon mirror 66 rotates at a setspeed from a rotation drive source (for example, a motor or speedreducer and the like), which is not illustrated, controlled by the lowercontrol device 24. Further, the rotation speed signal (spot light SPscan speed signal) sent out by the encoder, which is not illustrated,and is provided on the polygon mirror 66, is sent to the lower controldevice 24.

The cylindrical lens 60 provided between the reflective mirror 58 andthe reflective mirror 64 condenses (converges) the laser light LB on thereflective surface of the polygon mirror 66 in relation to thenon-scanning direction (Z direction), which is orthogonal to thescanning direction. Even if the reflective surface is inclined inrelation to the Z direction due to the cylindrical lens 60 (inclinedfrom the balanced state of the XY surface normal vector and thereflective surface), the influence thereof can be suppressed,suppressing deviation from the X direction of the irradiation positionof the laser light LB irradiated on the substrate P.

The laser light LB reflected by the polygon mirror 66 is reflected inthe −Z direction by the reflective mirror 68, and is incidental to anf-θ lens 70 having an optical axis AXu, which is parallel to the Z axis.The f-θ lens 70 is a telecentric optical system wherein the main lightbeam of the laser light LB projected on the substrate P is a constantnormal vector of the surface of the substrate P during scanning, whichmakes it possible to scan the laser light LB accurately and at aconsistent speed in the Y direction. The laser light LB irradiated fromthe f-θ lens 70 becomes a microscopic spot light SP with a semi-circularshape with a diameter of approximately a several μm (for example, 3 μm),and is irradiated on the substrate P via the cylindrical lens 72,wherein the bus line is parallel to the Y direction. The spot light(scanning spot light) SP is scanned one dimensionally by the polygonmirror 66 in a direction along the scan line L2 extending in the Ydirection.

Further, the processing device PR3, as illustrated in FIG. 3 and FIG. 4,is provided with 3 alignment microscopes AM (AM1 to AM3) to detect thealignment marks Ks (Ks1 to Ks3). The detection regions Vw (Vw1 to Vw3)of the alignment microscopes AM (AM1 to AM3) are disposed in a singleline so they align in the Y-axis direction on the circumferentialsurface. The alignment microscopes AM (AM1 to AM3) project illuminationlight for alignment on the substrate P, and, by imaging that reflectedlight with imaging elements such as CCD or CMOS, detect the alignmentmarks Ks (Ks1 to Ks3). In other words, the alignment microscope AM1images the alignment mark Ks1 formed in the edge of the +Y directionside of the substrate P existing in the detection region (imagingregion) Vw1. The alignment microscope AM2 images the alignment mark Ks2formed on the edge of the −Y direction side of the substrate P existingin the detection region Vw2. The alignment microscope AM3 images thealignment mark Ks3 formed in the center of the width direction of thesubstrate P existing in the detection region Vw3.

The image data imaged by the alignment microscopes AM (AM1 to AM3) issent to the image processing part provided in the lower control device24; the image processing part of the lower control device 24 calculates(detects) the position of the alignment marks Ks (Ks1 to Ks3) based onthe image data. The size of the detection regions Vw (Vw1 to Vw3) on thesubstrate P are set according to the size and alignment precision of thealignment marks Ks (Ks 1 to Ks3), but are a size of approximately from100 to 500 μm. Further, the illumination lamp for alignment is a lightwith a wavelength region that is mostly not sensitive in relation to thephotosensitive functional layer on the substrate P, for example, abroadband light with a wavelength width of approximately 500 to 800 nm,or a white light that does not include an ultra violet regionwavelength, and the like.

The lower control device 24 follows the control of the upper controldevice 14, and controls each part, which is the first storage deviceBF1, the second storage device BF2, and the processing device PR3, thatconfigures the pattern forming device 12. For example, the lower controldevice 24 controls the conveying speed of the substrate P conveyedwithin the processing device PR3, the edge position controller EPC2,EPC3, the light source device 32, the rotation of the polygon mirror 66,the optical element for drawing 52, and the like. Further, the lowercontrol device 24 outputs, to the upper control device 14, the positioninformation of the alignment marks Ks (Ks1 to Ks3) on the substrate Pdetected by the alignment microscopes AM (AM1 to AM3), rotation speedinformation (conveying speed information of the substrate P within theprocessing device PR3, scanning speed information of the spot light SP),strength information of the laser light LB detected by the strengthsensor 37, and the like. The lower control device 24 includes a computerand a recording medium with a program recorded thereon, and by executingthe program recorded on the recording medium, the computer functions asthe lower control device 24 of the present first embodiment. This lowercontrol device 24 may be a part of the upper control device 14, and maybe a separate control device from the upper control device 14.

FIG. 6 is a view illustrating a configuration of the processing devicePR4. The processing device PR4 has a processing tank BT with adeveloping fluid collected therein, guide rollers R4 to R7, which form aconveying circuit of the substrate P so that the substrate P is soakedin the developing fluid collected in the processing tank BT, a driveroller NR7, NR8, and a lower control device 80. In the bottom of theprocessing tank BT, a heater H1, H2 is provided to adjust thetemperature of the developing fluid; the heater H1, H2 drives andgenerates heat from the heater drive part 82, under the control of thelower control device 80.

The drive roller NR7 guides the substrate P to the guide roller R4 byrotating while sandwiching both surfaces of the substrate P sent outfrom the processing device PR3 via the second storage device BF2. Theguide roller R4 bends the substrate P conveyed in the +X direction tothe −Z direction side and guides it to the guide roller R5. The guideroller R5 bends the substrate P conveyed in the −Z direction to the +Xdirection side and guides it to the guide roller R6. The guide roller R6bends the substrate P conveyed in the +X direction to the +Z directionside and guides it to guide roller R7. The guide roller R7 bends thesubstrate P conveyed in the +Z direction to the +X direction side andguides it to the drive roller NR8. The drive roller NR8 conveys thesubstrate P to the processing device PR5 while sandwiching both surfacesof the substrate P sent out. The substrate P is immersed in thedeveloping fluid by the guide rollers R5, R6. The drive rollers NR7, NR8rotate due to applied rotational torque from a rotation drive source(not illustrated) having a motor or speed reducer and the likecontrolled by the lower control device 80. The conveying speed of thesubstrate P in the processing device PR4 is determined by the rotationspeed of the drive rollers NR7, NR8. Further, the rotation speed signal(the substrate P conveying speed signal) sent out from the encoder,which is not illustrated, and is provided on the drive rollers NR7, NR8,is sent to the lower control device 80. Note that an imaging device 83,which images the developed surface of the substrate P, is providedwithin the processing device PR4. The imaging device 83 is provided inthe downstream side (+X direction side) of the conveying direction ofthe substrate P in relation to the drive roller NR8. The imaging device83 images the patterns formed in the photosensitive functional layer bydevelopment.

The guide roller R4, R5 are provided on a moveable member 84, and themoveable member 84 has a drive part such as a linear motor, and can movein the X direction along the guide rail 86. In the moveable member 84, aposition sensor is provided for detecting the position in the Xdirection of the moveable member 84; the position information of themoveable member 84 detected by the position sensor 87 is sent to thelower control device 80. When the moveable member 84 moves in the −Xdirection side along the guide rail 86, the distance between the guiderails R5, R6 increases, causing the time that the substrate P isimmersed in the developing fluid (immersion time) to lengthen. Further,if the moveable member 84 moves in the +X direction side, the distancebetween the guide rollers R5, R6 decreases, causing the time that thesubstrate P is immersed in the developing fluid (immersion time) toshorten. This makes it possible to adjust the time that the substrate Pis immersed in the developing fluid. Further, the processing device PR4has a temperature sensor T that detects the temperature of thedeveloping fluid and a concentration sensor Cs that detects theconcentration of the developing fluid. By immersing the substrate P inthe developing fluid, patterns are formed in the photosensitivefunctional layer according to the latent image (reformed portion) formedin the photosensitive functional layer. When the photosensitivefunctional layer is a positive type photoresist, the portion irradiatedwith ultraviolet rays is reformed, and the reformed portion is dissolvedand removed by the developing fluid. Further, when the photosensitivefunctional layer is a negative type photoresist, the portion irradiatedwith ultraviolet rays is reformed, and the non-reformed portion that wasnot irradiated with ultraviolet rays is dissolved and removed by thedeveloping fluid. In the present first embodiment, the photosensitivefunctional layer is described as a positive type. Note that theprocessing device PR4 may have a dryer mechanism, although notillustrated, for removing the developing fluid adhered to the substrateP, in relation to the substrate P conveyed from the processing devicePR5.

The lower control device 80 follows the control of the upper controldevice 14, and controls each part of the processing device PR4. Forexample, the lower control device 80 controls the conveying speed of thesubstrate P conveyed within the processing device PR4, the heater drivepart 82, and the moveable member 84. Further, the lower control device80 outputs, to the upper control device 14, the temperature informationand concentration information of the developing fluid detected by thetemperature sensor Ts and the concentration sensor Cs, the positioninformation of the moveable member 84 detected by the position sensor87, the image data detected by the imaging device 83, rotation speedinformation (conveying speed information of the substrate P within theprocessing device PR4), and the like. The lower control device 80includes a computer and a recording medium with a program recordedthereon, and by executing the program recorded on the recording medium,the computer functions as the lower control device 80 of the presentfirst embodiment. This lower control device 80 may be a part of theupper control device 14, and may be a separate device from the uppercontrol device 14.

Note that when the photosensitive functional layer is a silane couplingagent or a photosensitive reducing agent, within the processing tank BTof the processing device PR4, a substitute for a developing fluid, forexample, a plating solution including a material (metallic foil) forelectronic devices such as palladium ion, can be collected. In otherwords, in this case, the processing device PR4 is a plating device,which performs a processing step (third processing step) of platingprocessing. A material for electronic devices is precipitated accordingto the latent image (reformed portion) formed in the photosensitivefunctional layer by immersing the substrate P in a plating solution, anda metallic foil layer (conductive) pattern is formed in the substrate P.

Since the processing device PR5 for performing etching basically has thesame configuration as the processing device PR4 (not illustrated), butan etching fluid (corrosive fluid) is kept in the processing tank BTinstead of the development fluid. Therefore, when the movable member 84of the processing device PR5 moves to the −X direction side, the timethat the substrate P is immersed in the etching fluid (immersion time)is lengthened, and when the movable member 84 moves to the +X directionside, the time that the substrate P is immersed in the etching fluid(immersion time) is shortened. Furthermore, the temperature of theetching fluid is detected by the temperature sensor Ts of the processingdevice PR5, and the concentration of the etching fluid is detected bythe concentration sensor Cs. By immersing the substrate P in the etchingfluid using the processing device PR5, a metallic thin film (Al or Cuand the like) formed in the lower layer of the photosensitive functionallayer is etched by using the photosensitive layer in which a pattern isformed as a mask. As a result, the pattern of the metal layer appears onthe substrate P. The imaging device 83 of the processing device PR5images the pattern on the metal layer formed on the substrate P byetching. The substrate P in which the processing is performed by theprocessing device PR5 is sent to the processing device PR for performingthe next processing. When a plating process is performed by theprocessing device PR4, since the etching process is unnecessary, anotherprocessing device PR, for example, a processing device for performingdrying or the like, is provided instead of the processing device PR5.

Here, in order for a pattern on the desired metal layer to appear on thesubstrate P using the device manufacturing system 10, each processingdevice PR1 to PR5 performs each process on the substrate P according tothe setting conditions. For example, processing conditions for definingthe voltage for emitting plasma, the irradiation time for irradiatingplasma, and the like, and the conveying speed condition for thesubstrate P are set as the setting conditions of the processing devicePR1. The processing device PR1 performs plasma surface processing on thesubstrate P while conveying the substrate P according to the settingconditions. Processing conditions (first processing conditions)including a region condition for defining a region where thephotosensitive functional layer is formed and a film thickness conditionfor defining the film thickness of the photosensitive functional layer,and a conveying speed condition of the substrate P are set as thesetting conditions (first setting conditions) of the processing devicePR2. The processing device PR2 performs a film formation processing ofthe photosensitive functional layer while conveying the substrate Paccording to the setting conditions.

Processing conditions (second processing conditions), including astrength condition for defining the strength of the laser light LB, ascanning speed condition for defining the scanning speed (rotation speedof the polygon mirror 66) of the spot light SP, an exposure frequencycondition for defining the frequency of multiple exposures, a patterncondition (pattern data) for defining a pattern to be drawn, and thelike; and a conveying speed condition of the substrate P are set as thesetting conditions (second setting conditions) of the processing devicePR3. The processing device PR3 performs exposure processing on thesubstrate P while conveying the substrate P according to the settingconditions. Processing conditions (third processing conditions)including a temperature condition for defining the temperature of thedevelopment fluid, a concentration condition for defining concentrationof the development fluid, an immersion time condition for defining theimmersion time, and the like; and a conveying speed condition of thesubstrate P are set as the setting conditions (third setting conditions)of the processing device PR4. The processing device PR4 performsdevelopment processing on the substrate P while conveying the substrateP according to the setting conditions. Processing conditions including atemperature condition for defining the temperature of the etching fluid,a concentration condition for defining the concentration, an immersiontime condition for defining the immersion time, and the like; and aconveying speed condition of the substrate P are set as the settingconditions of the processing device PR5; and the processing device PR5performs etching processing while conveying the substrate P according tothe setting conditions. Note that when a plating processing is performedby the processing device PR4, processing conditions (third processingconditions) including a temperature condition for defining thetemperature of the plating fluid, a concentration condition for definingconcentration of the plating fluid, an immersion time condition fordefining the immersion time, and the like, and a conveying speedcondition of the substrate P are set as the setting conditions (thirdsetting conditions) of the processing device PR4. Therefore, theprocessing device PR4 performs plating processing on the substrate Pwhile conveying the substrate P according to the setting conditions.

The setting conditions of each processing device PR1 to PR5 is preset sothat the state of the actual processing (actual processing) applied byeach processing device PR1 to PR5 is the target processing state. Thesetting conditions of each processing device PR1 to PR5 may be stored ina recording medium, not illustrated, provided in each processing devicePR1 to PR5, and may be recorded in a recording medium, not illustrated,of the upper control device. Furthermore, in the device manufacturingsystem 10, since the substrate P is conveyed at a constant speed, theconveying speed condition of the setting conditions set by eachprocessing device PR1 to PR5 is essentially the same speed (for example,a constant speed in the range of 5 mm/second to 50 mm/second).

Each processing device PR1 to PR5 performs processing on the substrate Paccording to the setting conditions, but in some cases, the state of theactual processing (actual processing) has a processing error E thatexceeds the permissible range of the target processing state. Forexample, since the strength of the laser light LB emitted by the laserlight source of the light source device 32 may decrease, and thetemperature and concentration of the development fluid and etching fluidmay decrease, the state of the actual processing (actual processing) hasa processing error E that exceeds the permissible range of the targetprocessing state. For example, since the amount of exposure decreaseswhen the strength of the laser light LB decreases, in the case of aphotoresist, a portion of the region where the spot light SP isirradiated, that is, the photosensitive functional layer (photoresistlayer) in the outer peripheral portion of a region where the spot lightSP is irradiated, is not reformed to the deep portion. Thus, the linewidth of the pattern formed on the photosensitive functional layer bythe developing processing becomes thick relative to the line width(target line width) of the desired pattern. In other words, since theportion where light is irradiated and reformed dissolves due to thedevelopment, and the region of the remaining portion of the resist layer(non-reformed portion) remains after being etched as a pattern of themetal layer (conductive) such as a circuit or a wiring for a displaypanel, the line width of the pattern thickens as the amount of exposuredecreases. As a result, the pattern of the metal layer appearing on thesubstrate P differs from the desired pattern.

When the temperature and concentration of the development fluid isdecreased, or when the immersion time of the development fluid isshortened, the reformed portion of the photosensitive functional layercannot be sufficiently removed by the development fluid. Thus, the linewidth of the pattern formed on the photosensitive functional layerdeviates from the target line width corresponding to the latent imageformed on the photosensitive functional layer by the processing devicePR4. As a result, the pattern on the metal layer appearing on thesubstrate P is not the desired pattern.

When the temperature and concentration of the etching fluid isdecreased, or when the immersion time of the etching fluid is shortened,etching of the metal thin film (conductive thin film) formed on thelower layer of the photosensitive functional layer by using thephotosensitive functional layer in which the pattern is formed as a maskcannot be sufficiently performed. Thus, the line width of the pattern onthe metal layer, which the processing device PR5 formed by etching,deviates from the target line width. In other words, since the portionof the metal thin film removed by etching is a pattern such as a circuitor wiring and the like for a display panel, when etching is notsufficiently performed by using the photosensitive functional layer onwhich the pattern is formed as a mask, the line width of the patternthickens. As a result, the pattern on the metal layer appearing on thesubstrate P is not the desired pattern.

Furthermore, when the film thickness of the photosensitive functionallayer (photoresist) thickens, since it is difficult to reform the deepportion of the photosensitive functional layer of the region where thespot light SP is irradiated, the line width of the pattern formed on thephotosensitive functional layer deviates from the target value due tothe removal of the reformed portion by the development fluid. As aresult, the pattern on the metal layer appearing on the substrate P isnot the desired pattern.

Thus, when any one of the states of actual processing applied by eachprocessing device PR1 to PR5 on the substrate P according to the settingconditions has a processing error E that exceeds the permissible rangeof the target processing state, the desired pattern of the metal layerdoes not appear on the substrate P, and the shape or size of the patternfluctuates. Thus, in the present first embodiment, when at least one ofthe actual processing states applied on the substrate P in each of theprocessing devices PR1 to PR5 has a processing error E that exceeds thepermissible range of the target processing state, the upper controldevice 14 changes the setting conditions of the other processing devicePR, other than the processing devices PR generating the processing errorE, according to the processing error E. The processing error E indicateshow much the shape or dimensions of the pattern formed on the substrateP varies with the shape or dimensions of the target pattern.

When the setting conditions exhibiting the processing error E is thesetting conditions of the processing device PR3, first the settingconditions of the processing device PR3 is changed so that theprocessing error does not occur, or so that the processing error fallswithin the permissible range. Then, when it cannot be supported by onlychanging the setting conditions of the processing device PR3, thesetting conditions of the other processing devices PR (PR1, PR2, PR4,PR5) are further changed so that the processing error does not occur, orso that the processing error falls within the permissible range. At thistime, after the change of the setting conditions of the other processingdevices PR is completed, the setting conditions of the processing devicePR3 may be restored. Furthermore, when the setting conditions exhibitingthe processing error E is the setting conditions of a processing devicePR other than the processing device PR3, the setting conditions of theprocessing device PR3 is preferentially changed so that the processingerror does not occur, or so that the processing error falls within thepermissible range.

The upper control device 14 illustrated in FIG. 1 sets the settingconditions (recipe) to be the target value of the processing in eachprocessing device PR1 to PR5, corrects those setting conditions, and isprovided with an operating device for monitoring the processing statusof each processing device PR1 to PR5. The operating device is configuredwith an input device such as a keyboard, mouse, touch panel or the likefor inputting data, parameters, commands or the like; and with a monitordevice (display) for displaying the setting conditions of eachprocessing device PR1 to PR5, the processing state, generating status ofthe processing error E, candidates of the processing device PR that canchange the setting conditions for correcting the processing error E,information indicating the scale and the like (amount of correction,correction time, and the like) for correction, and information relatingto the adjustment of the conveying speed of the substrate P.

The operation of the device manufacturing system 10 when any one of theactual processing states applied by each processing device PR1 to PR5 onthe substrate P according to the setting conditions has a processingerror E that exceeds the permissible range of the target processingstate will be described below. FIG. 7 is a flow chart illustrating theoperation of the device manufacturing system for determining theprocessing device PR that is generating the processing error E exceedingthe permissible range. First, the upper control device 14 determineswhether the film thickness of the photosensitive functional layer iswithin the permissible range (step S1). In other words, it is determinedwhether the film thickness of the photosensitive functional layeractually formed is within the permissible range for the film thicknesscondition set so as to be the target processing state (hereinafter, thetarget thickness condition). This determination is performed based onthe film thickness measured by the film thickness measuring device 16 a.That is, in step S1, it senses whether the quality of pattern (fidelityor uniformity and the like of shape and dimension) formed on thesubstrate P due to the setting conditions of the processing device PR2exceeds the target permissible range and changes (decreases). In stepS1, when determined that the film thickness measured by the filmthickness measuring device 16 a is not within the permissible range forthe target film thickness, the upper control device 14 determineswhether the processing error E (E2) is generated exceeding thepermissible range in the processing device PR2 (step S2). In otherwords, it is determined whether the actual processing state applied bythe processing device PR2 has a processing error E2 that exceeds thepermissible range for the target processing state.

Meanwhile, in step S1, when determined that the film thickness measuredby the film thickness measuring device 16 a is within the permissiblerange, the upper control device 14 determines whether the amount ofexposure of the laser light LB irradiated on the substrate P by theprocessing device PR3 is within the permissible range for the targetamount of exposure (step S3). The determination is performed bydetermining whether the strength of the laser light LB detected by thestrength sensor 37 is within the permissible range for the strengthcondition set so as to be the target processing state (hereinafter,target strength condition). In other words, since the line width of thepattern formed on the photosensitive function layer is changed accordingto the strength of the laser light LB, it is determined whether theamount of exposure is within the permissible range based on the strengthof the laser light LB indicating the amount of exposure. Note that instep S3, it may be determined whether there is other informationindicating the amount of exposure, for example, whether the scanningspeed and the like of the spot light SP is within the permissible rangefor the scanning speed condition set so as to be the target processing(hereinafter, target scanning speed condition). Furthermore, it may bedetermined whether the amount of exposure is within the permissiblerange based on a plurality of information (strength of the laser lightLB, scanning speed of the spot light SP, and the like). That is, in stepS3, it senses whether the quality of pattern (fidelity or uniformity andthe like of shape and dimension) formed on the substrate P due to thesetting conditions of the processing device PR3 exceeds the targetpermissible range and changes (decreases). In step S3, when it isdetermined that the amount of exposure is not within the permissiblerange for the target amount of exposure (the processing condition set soas to be the target processing state), the upper control device 14determines whether the processing error E (E3) is generated exceedingthe permissible range in the processing device PR3 (step S4). In otherwords, it is determined whether the actual processing state applied bythe processing device PR3 has a processing error E4 that exceeds thepermissible range for the target processing state.

Meanwhile, in step S3, when it is determined that the amount of exposureis within the permissible range, the upper control device 14 determineswhether the line width of the pattern formed on the photosensitivefunctional layer due to the processing device PR4 performing thedevelopment processing is within the permissible range (step S5). Theupper control device 14 measures the line width of the pattern formed onthe photosensitive functional layer based on image data that the imagingdevice 83 provided in the processing device PR4 imaged. Although thesetting conditions of the processing PR4 is defined so that the linewidth of the pattern formed on the photosensitive functional layer isthe target line width in principle, for example, when less than orshorter than the temperature condition (hereinafter, the targettemperature condition), the concentration condition (hereinafter, thetarget concentration condition), or the immersion time condition(hereinafter, the target immersion time condition) set so that thetemperature, concentration, or immersion time of the development fluidis the target processing state, the line width of the formed patterndeviates from the target line width. That is, in step S5, it senseswhether the quality of pattern (fidelity or uniformity and the like ofshape and dimension) formed on the substrate P due to the settingconditions of the processing device PR4 exceeds the target permissiblerange and changes (decreases). In step S5, when determined that the linewidth of the pattern formed on the photosensitive functional layer isnot within the permissible range, the upper control device 14 determineswhether the processing error E (E4) is generated exceeding thepermissible range in the processing device PR4 (step S6). In otherwords, it is determined whether the actual processing state applied bythe processing device PR4 has a processing error E4 that exceeds thepermissible range for the target processing state.

Meanwhile, in step S5, when it is determined that the line width of thepattern formed on the photosensitive functional layer is within thepermissible range, the upper control device 14 determines whether theline width of the pattern on the metal layer appearing on the substrateP due to etching by the processing device PR5 is within the permissiblerange (step S7). The upper control device 14 measures the line width ofthe pattern formed on the metal layer based on image data that theimaging device 83 provided in the processing device PR5 imaged. Althoughthe setting conditions of the processing PR5 is defined so that the linewidth of the pattern on the metal layer is the target line width inprinciple, for example, when less than or shorter than the temperaturecondition (hereinafter, the target temperature condition), theconcentration condition (hereinafter, the target concentrationcondition), or the immersion time condition (hereinafter, the targetimmersion time condition), set so that the temperature, concentration,or immersion time of the etching fluid is the target processing state,the line width of the pattern on the metal layer deviates from thetarget line width. That is, in step S7, it is detected whether thequality of pattern (fidelity or uniformity and the like of shape anddimension) formed on the substrate P due to the setting conditions ofthe processing device PR5 exceeds the target permissible range andchanges (decreases). In step S7, when it is determined that the linewidth of the pattern on the metal layer is not within the permissiblerange, the upper control device 14 determines whether the processingerror E (E5) is generated exceeding the permissible range in theprocessing device PR5 (step S8). In other words, it is determinedwhether the actual processing state applied by the processing device PR5has a processing error E4 that exceeds the permissible range for thetarget processing state. Meanwhile, in step S7, when it is determinedthat the line width of the pattern on the metal layer is within thepermissible range, it is determined that the processing error E is notgenerated in the processing devices PR2 to PR5 (step S9).

In step S4 of FIG. 7, the operation of the device manufacturing system10 when it is determined that the processing error E3 is generatedexceeding the permissible range in the processing device PR3 isdescribed. FIG. 8 is a flow chart illustrating the operation of thedevice manufacturing system 10 when the processing error E3 is generatedin a processing device PR3. When the processing error E3 is generated inthe processing device PR3, the upper control device 14 determineswhether the error processing E3 can be covered by changing theprocessing condition from among the setting conditions of the processingdevice PR3 (step S11). In other words, it is determined whether theprocessing error E3 can be eliminated by changing the processingcondition or whether the error processing E3 can be kept within thepermissible range. For example, when the amount of exposure barelyexceeds the permissible range for the target amount of exposure, theamount of exposure needs to be increased to the target amount ofexposure, and it is determined whether it can be made to be the targetamount of exposure by changing the processing condition. Since theamount of exposure is decided by the strength of the laser light LB, thescanning speed of the spot light SP, and the like, in step S11 it can bedetermined whether the actual amount of exposure can be increased to thetarget amount of exposure by changing the strength condition and thescanning speed condition or the like.

In step S11, when it is determined that it can be covered by changingthe processing condition, the upper control device 14 changes theprocessing condition (strength condition or scanning speed condition,pattern condition and the like) of the setting conditions of theprocessing device PR3 according to the processing error E3 (step S12).Meanwhile, in step S11, when it is determined that it cannot be coveredby only changing the processing condition, the upper control device 14changes the processing condition of the processing device PR3 and theconveying speed condition according to the processing error E3 (stepS13). For example, when the amount of exposure barely exceeds thepermissible range for the target amount of exposure, the processingcondition is changed and the conveying speed condition is changed sothat the conveying speed of the substrate P slows down. The amount ofexposure can be increased by slowing down the conveying speed condition.Note that from among the processing errors E3, the processing error thatcan be covered by changing the processing condition is E3 a, and theprocessing error that can be covered by changing the conveying speedcondition is E3 b. Therefore, E3=E3 a+E3 b. When the processing error E3can be covered by changing only the processing condition, E3 a=E3, andE3 b=0. Furthermore, when the processing condition cannot be changed,for example, when the preset strength condition is the maximum strength,or the like, only the conveying speed condition can be changed accordingto the processing error E3. In this case, E3 a=0, and E3 b=E3.

Here, although the processing devices PR1 to PR5 conveys the substrate Pat a constant speed, since the processing device PR3 is provided betweenthe first storage device BF1 and the second storage device BF2, theconveying speed of the substrate P in the processing device PR3 can beindependently changed. In other words, the difference of the conveyingspeed between the conveying speed of the processing device PR3 and theprocessing device PR other than a processing device PR3 can be absorbedby the first storage device BF1 and the second storage device BF2. Whenthe conveying speed of the substrate P in the processing device PR3 isconveyed slower than the constant speed, the amount of storage of thesubstrate P in the first storage device BF1 is gradually increased, andthe amount of storage of the second storage device BF2 is graduallydecreased. Conversely, when the conveying speed of the substrate P inthe processing device PR3 is conveyed faster than the constant speed,the amount of storage of the substrate P in the first storage device BF1is gradually decreased, and the amount of storage of the second storagedevice BF2 is gradually increased. When the storage length of the firststorage device BF1 or the second storage device BF2 is less than orequal to a predetermined storage length, since the substrate P is notadditionally stored in the first storage device BF1 or the secondstorage device BF2, the conveying speed of the substrate P in theprocessing device PR3 cannot be independently changed. Thus, even thoughthe conveying speed of the substrate P in the processing device PR3 canbe temporarily changed, the conveying speed of the substrate P cannot bechanged for more than a certain amount of time.

Thus, it is necessary to restore the conveying speed of the substrate Pin the processing device PR3 to keep the storage length of the firststorage device BF1 and the second storage device BF2 within apredetermined range. Thus, in step S13, when the processing conditionand the conveying speed condition of the processing device PR3 ischanged, the upper control device 14 determines whether the processingerror E3 b generated when the conveying condition of the processingdevice PR3 is restored can be covered (interpolated) by changing theprocessing condition of any one of the other processing devices PR (stepS14). In other words, when the conveying speed of the processing devicePR3 is restored, since the amount of exposure is decreased, it isdetermined whether the line width of the pattern can be set to thetarget line width by compensating for defects caused by the otherprocessing devices PR.

In step S14, when determined that the processing condition of any one ofthe other processing devices PR can be covered by changing according tothe processing error E3 b, the processing condition of the otherprocessing device PR, wherein it was determined that it could becovered, is changed according to the processing error E3 b generatedwhen the conveying speed of the processing device PR3 is restored (stepS15), and then proceeds to step S17. For example, when the otherprocessing device PR, wherein it was determined that it can be coveredby changing the processing condition, is the processing device PR2, theprocessing condition (film thickness condition and the like) of theprocessing device PR2 is changed according to the processing error E3 b(for example, insufficient exposure) generated when the conveying speedcondition of the processing device PR3 is restored. When the processingerror E3 b is due to insufficient exposure, since it is reformed to thedeep portion of the photosensitive functional layer even though theamount of exposure becomes smaller as the film thickness becomesthinner, the processing error E3 b (insufficient exposure) generatedwhen the conveying speed condition of the processing device PR3 isrestored can be covered by thinning the thickness of the film thicknesscondition. As a result, the line width of the pattern formed on thephotosensitive functional layer and the line width of the pattern on themetal layer whereon it appears can be set to the target line width dueto the development processing.

When the other processing device PR, wherein it was determined that itcan be covered by changing the processing condition, is the processingdevice PR4, the processing condition (temperature condition,concentration condition, immersion time condition) of the processingdevice PR4 is changed according to the processing error E3 b generatedwhen the conveying speed condition of the processing device PR3 isrestored. For example, since the region in which the photosensitivefunctional layer is dissolved and removed widens for as high as thetemperature and concentration of the development fluid, and as long asthe immersion time in which the substrate P is immersed in thedevelopment fluid, the photosensitive functional layer can be removed tothe deep portion. Therefore, when the processing error E3 is due toinsufficient exposure, the processing error E3 b (insufficient exposure)generated when the conveying speed condition of the processing devicePR3 is restored can be covered, and the line width of the pattern can bethe target line width by increasing or lengthening at least one of thetemperature condition, the concentration condition, and the immersiontime condition. The lower control device 80 of the processing device PR4controls heaters H1 and H2 of the processing device PR4 according to thetemperature condition, and moves the movable arm 84 of the processingdevice PR4 according to the immersion time condition. Furthermore, thedevelopment fluid in the processing tank BT is recovered and acirculation system for supplying a new development fluid to the processtank BT is provided in the processing tank BT of the processing devicePR4, and the lower control device 80 of the processing device PR4changes the concentration of the development fluid supplied to theprocessing tank BT according to the concentration condition.

When the other processing device PR, wherein it was determined that itcan be covered by changing the processing condition, is the processingdevice PR5, the processing condition (temperature condition,concentration condition, immersion time condition) of the processingdevice PR5 is changed according to the processing error E3 b generatedwhen the conveying speed condition of the processing device PR3 isrestored. For example, although the metallic think film formed on thelower layer of the photosensitive functional layer is etched by usingthe photosensitive functional layer whereon the pattern as a mask isformed, the etched portion can be widened as much as the temperature andconcentration of the etching fluid is high, and as the immersion timewherein the substrate P is immersed in the etching fluid is long.Therefore, when the processing error E3 is due to insufficient exposure,the processing error E3 b (insufficient exposure) generated when theconveying speed condition of the processing device PR3 is restored canbe covered, and the line width of the pattern can be the target linewidth by increasing or lengthening at least one of the temperaturecondition, the concentration condition, and the immersion time conditionof the etching fluid. The lower control device 80 of the processingdevice PR5 controls the heaters H1 and H2 of the processing device PR5according to the temperature condition, and moves the movable arm 84 ofthe processing device PR5 according to the immersion time condition.Furthermore, the etching fluid in the processing tank BT is recoveredand a circulation system for supplying a new etching fluid to theprocessing tank BT is provided in the processing tank BT of theprocessing device PR5, and the lower control device 80 of the processingdevice PR5 changes the concentration of the development fluid suppliedto the processing tank BT according to the concentration condition.

Here, it is conceivable to cover the processing error E3 b generated inthe processing device PR3 by changing the processing condition of theother processing device PR other than the processing device PR3 from thebeginning without changing the conveying speed condition of theprocessing device PR3. However, in the processing device PR3 (patterningdevice such as an exposure device EX), the actual processing state canbe changed instantaneously when the processing condition changes, but inother processing devices PR (mainly a wet-type processing device) otherthan the processing device PR3, even if the processing condition ischanged, it takes some time for the actual processing state to becomethe target processing state determined by the processing condition afterbeing changed, and the processing error E3 b generated by the processingdevice PR3 cannot be quickly covered. For example, the film thickness ofthe photosensitive functional layer whereon the substrate P is depositedis gradually changed as the time elapses even when the processingcondition (film thickness condition and the like) of the processingdevice PR2 is changed. Furthermore, the temperature, concentration, andimmersion time of the development fluid and the etching fluid isgradually changed as the time elapses even when the processing condition(temperature condition, concentration condition, immersion timecondition) of the processing devices PR4 and PR5 is changed. Thus, theprocessing error E3 b is handled by gradually changing the conveyingspeed of the substrate P of the processing device PR3 until the actualprocessing state of the other processing devices PR becomes the targetprocessing state determined by the processing condition after beingchanged. After the processing condition of the other processing devicesPR is changed, since the actual processing state gradually approachesthe target processing state determined by the processing condition afterbeing changed due to the other processing devices, the upper controldevice 14 thereby gradually restores the conveying speed condition ofthe substrate P in the processing device PR3. The upper control device14 gradually approaches the conveying speed condition prior to changingthe conveying speed condition of the substrate P in the processingdevice PR3 based on the detection results of the film thicknessmeasuring device 16 a, the temperature sensor Ts, the concentrationsensor Cs, the position sensor 87, and the like.

Note that when there is a plurality of processing devices PR wherein theprocessing error E3 b generated when restoring the conveying speedcondition of the processing device PR3 can be covered, the processingcondition of the processing device PR near the processing device PR3 maybe changed. For example, in the case of the processing device PR2 andPR5, the processing device PR wherein the processing error E3 bgenerated when restoring the conveying speed condition of the processingdevice PR3 can be covered, may change the processing condition of theprocessing device PR2 near the processing device PR3. Furthermore, instep S14, although it is determined whether the processing error E3 bgenerated when restoring the conveying speed condition of the processingdevice PR3 can be covered by the other processing devices PR, it mayalso be determined whether the processing error E3 b generated in theprocessing device PR3, that is, the processing error E3 b generated whenrestoring the processing condition and the conveying speed condition ofthe processing device PR3 can be covered by the other processing devicesPR. At this time, in step S15, the processing error E3 generated in theprocessing device PR4 can be covered by changing the processingcondition of the other processing devices PR wherein is was determinedthat it could be covered. In this case, after the processing conditionof the other processing devices PR is changed, since the actualprocessing state gradually approaches the target processing statedetermined by the processing condition after being changed due to theother processing devices PR, the upper control device 14 thereby alsogradually restores the processing condition in addition to the conveyingspeed condition of the substrate P in the processing device PR3.

Meanwhile, in step S14, when determined that the processing error E3 b(for example, insufficient exposure) generated when restoring theconveying speed direction of the processing device PR3 cannot be coveredby only changing the processing condition of the any one of the otherprocessing devices PR, the upper control device 14 changes theprocessing condition of the plurality of other processing devices PRaccording to the processing error E3 b generated when restoring theconveying speed condition of the processing device PR3 (step S16), andthen proceeds to step S17. In this case, since the actual processingstate of the plurality of other processing devices PR approaches thetarget processing state determined by the processing condition afterbeing changed as time has elapsed, the upper control device 14 therebygradually restores the conveying speed condition of the substrate P inthe processing device PR3.

Note that the processing condition of the plurality of other processingdevices PR may be changed according to the processing error E3 generatedin the processing device PR3. In this case, after the processingcondition of the plurality of other processing devices PR is changed,since the actual processing state gradually approaches the targetprocessing state determined by the processing condition after beingchanged, the upper control device 14 thereby also gradually restores theprocessing condition in addition to the conveying speed condition of thesubstrate P in the processing device PR3.

When proceeding to step S17, the upper control device 14 determineswhether the change of processing condition is completed. In other words,it is determined whether the actual processing state becomes the targetprocessing state determined by the processing condition after beingchanged due to the processing device PR wherein the processing conditionwas changed in step S15 or S16. This determination is performed based onthe detection results of the film thickness measuring device 16 a, thetemperature sensor Ts, the concentration sensor Cs, the position sensor87, and the like. In step S17, when determined that the change of theprocessing condition is not completed, it remains at step S17, and whendetermined that the change of the processing condition is completed, theconveying speed condition of the processing device PR3 is restored (stepS18). Note that when the processing error E3 generated in the processingdevice PR3 is covered by the other processing devices PR, the processingcondition is also restored in addition to the conveying speed conditionof the processing device PR3.

Note that in step S16, when the processing error E3 b of the processingdevice PR3 cannot be covered, even when changing the processingcondition of the plurality of other processing devices PR, it isdetermined whether the conveying speed condition of the plurality ofother processing devices PR can be changed, and when it can be changed,it may be changed so that the conveying speed condition of allprocessing devices PR1 to PR5 are the same. For example, the conveyingspeed condition of the processing devices PR1, PR2, PR4, and PR5 may bechanged so as to be the same as the conveying speed condition of theprocessing device PR3.

Next, the operation of the device manufacturing system when determinedthat the processing error E (E2, E4, or E5) is generated exceeding thepermissible range of the processing devices PR (PR2, PR4, or PR5) otherthan the processing device PR3 will be described by step S2, S6, or S8of FIG. 7. FIG. 9 is a flow chart illustrating the operation of thedevice manufacturing system when the processing error E3 is generated inthe processing device PR3 other than a processing device PR. The uppercontrol device 14 determines whether the processing error E (E2, E4, orE5) can be covered by changing the processing condition of theprocessing devices PR3 when the processing error E (E2, E4, or E5) isgenerated in the processing devices PR other than the processing devicePR3. For example, in the case where the other processing devices PR inwhich the processing error E is generated is the processing devices PR2,when the film thickness of the photosensitive function layer actuallyformed is thinner than the target film thickness, since the line widthof the patter formed on the photosensitive functional layer by theprocessing devices PR4 becomes thicker, it is determined whether theline width of the pattern formed on the photosensitive functional layerby increasing the amount of exposure can become the target line width.Furthermore, in the case where the other processing devices PR in whichthe processing error E is generated is the processing devices PR4 andPR5, when the temperature, concentration, or immersion time of theactual development fluid and etching fluid is less than or shorter thanthe target temperature condition, concentration condition, or immersiontime condition, since the line width of the pattern formed on thephotosensitive functional layer and the pattern on the metal layerbecomes thicker, it is determined whether the line width of the patternformed on the photosensitive functional layer by increasing the amountof exposure and the pattern on the metal layer can become the targetline width by changing the processing condition of the processingdevices PR3.

In step S21, when determined that it can be supported by changing theprocessing condition of the processing device, the upper control device14 changes the processing condition (strength condition or scanningspeed condition, pattern condition and the like) of the processingdevice PR3 according to the processing error E (E2, E4, or E5) (stepS22). Meanwhile, in step S21, when determined that it cannot besupported by changing the processing condition, the upper control device14 changes the processing condition of the processing device PR3 and theconveying speed condition according to the processing error E (E2, E4,or E5) (step S23). Note that when the processing condition cannot bechanged, for example, when the preset strength condition is the maximumstrength, or the like, only the conveying speed condition can be changedaccording to the processing error E (E2, E4, or E5).

Next, the upper control device 14 determines if the processing error E(E2, E4, or E5) can be covered even when the setting conditions of theprocessing devices PR3 is restored, by changing the processing conditionof the processing device PR (PR2, PR4, or PR5) wherein the processingerror E (E2, E4, or E5) is generated (step S24). In other words, it isdetermined whether the processing error E generated when the settingconditions of the processing device PR3 is restored can be eliminated bychanging the processing condition of the processing device PR whereinthe processing error E is generated. For example, when the processingdevice PR generating the processing error E is the processing devicePR2, it is determined whether the film thickness condition can bechanged according to the processing error E2 when the film thickness ofthe photosensitive functional layer that is actually formed exhibits theprocessing error E2 of the target film thickness condition. Furthermore,in the case where the other processing devices PR in which theprocessing error E is generated is the processing devices PR4 and PR5,when the temperature, concentration, or immersion time of the actualdevelopment fluid and etching fluid exhibits the processing error E4 andE5 of the target temperature condition, concentration condition, orimmersion time condition, it is determined whether the temperaturecondition, concentration condition, or immersion time condition can bechanged according to the processing error E4 and E5.

In step S24, when determined that the processing error E can be coveredeven when the setting conditions of the processing device PR3 isrestored by changing the processing condition of the processing devicePR in which the processing error E is generated, the upper controldevice 14 changes the processing condition of the processing device PRgenerating the processing error E (step S25). For example, when theother processing device PR in which the processing error E is generatedis the processing device PR2, when the film thickness of thephotosensitive functional layer actually formed is thin for the targetfilm thickness condition, the setting conditions is thickened accordingto the processing error E2. Furthermore, in the case where theprocessing device PR in which the processing error E is generated is theprocessing devices PR4 or PR5, when at least one processing condition ofthe temperature, concentration, and immersion time of the actualdevelopment fluid and etching fluid is less than or shorter than thetarget temperature condition, concentration condition, or immersion timecondition, then at least one processing condition of the temperaturecondition, concentration condition, or immersion time condition isincreased or made longer according to the processing error E4 or E5. Inthis case, since the actual processing state of the processing device PRgenerating the processing error E changes as the time elapses, the uppercontrol device 14 thereby gradually restores the setting conditions ofthe processing device PR3.

Meanwhile, in step S24, when determined that the processing condition ofthe processing device PR (PR2, PR4, or PR5) in which the processingerror E (E2, E4, or E5) is generated cannot be eliminated, the uppercontrol device 14 determined if the processing error E can be covered bychanging the processing condition of the other processing devices PR(except the processing device PR3) (step S26). For example, when theprocessing device PR generating the processing error E is the processingdevice PR2, it is determined whether the processing error E2 can becovered by changing processing condition of the processing device PR4 orPR5 when the film thickness of the photosensitive functional layer thatis actually formed exhibits the processing error E2 that exceeds thepermissible range of the target film thickness condition. When the filmthickness of the photosensitive functional layer actually formed isthicker than the target film thickness condition, since the line widthof the pattern becomes thicker, it is determined whether the line widthof the pattern can become the target line width by increasing orlengthening the temperature, concentration, and immersion time of thedevelopment fluid or etching fluid.

In step S26, when determined that it can be supported by changing theprocessing condition of the other processing device PR, the uppercontrol device 14 changes the processing condition of the otherprocessing device PR according to the processing error E (step S27), andproceeds to step S29. For example, in the case where the processingdevice PR generating the processing error E is the processing devicePR2, when the film thickness of the photosensitive functional layeractually formed is thicker than the target film thickness condition, atleast one processing condition of the temperature condition,concentration condition, and immersion time of the processing devicesPR4 and PR5 is increased or lengthened according to the processing errorE2. In this case, since the actual processing state of the otherprocessing devices PR approaches the target processing state determinedby the processing condition after being changed as time has elapsed, theupper control device 14 thereby gradually restores the settingconditions of the processing device PR3.

Meanwhile, in step S26, when determined that that it cannot be supportedeven by changing the processing condition of the other processingdevices PR, the upper control device 14 changes the processing conditionof the plurality of other processing devices PR other than theprocessing device PR3 according to the processing error E (step S28),and proceeds to step S29. In this case, since the actual processingstate of the plurality of the other processing devices PR approaches thetarget processing state determined by the processing condition afterbeing changed as time has elapsed, the upper control device 14 therebygradually restores the setting conditions of the processing device PR3.

When proceeding to step S29, the upper control device 14 determineswhether the change of processing condition is completed. In other words,it is determined whether the actual processing state becomes the targetprocessing state determined by the processing condition after beingchanged due to the processing device PR wherein the processing conditionwas changed in step S25, S27, or S28. This determination is performedbased on the detection results of the film thickness measuring device 16a, the temperature sensor Ts, the concentration sensor Cs, the positionsensor 87, and the like. In step S29, when determined that the change ofthe processing condition is not completed, it remains at step S29, andwhen determined that the change of the processing condition iscompleted, the setting conditions of the processing device PR3 isrestored (step S30).

Note that in step S22, when only the processing condition of theprocessing device PR3 is changed, the operation illustrated in FIG. 9may be completed similar to the operation illustrated in FIG. 8. Inother words, in this case, the operation of steps S24 to S30 areunnecessary. Furthermore, in step S30, although the setting conditionsof the processing device PR3 is restored, the conveying speed conditionof the processing device PR3 may be the only thing restored. In thecase, in step S25, S27, or S28, the processing condition is changedaccording to the processing error that generates when only the conveyingspeed condition of the processing device PR3 is restored.

Thus, when the actual processing state (actual processing results) dueto the processing device PR of any one of the processing devices PR2 toPR5 has the processing error E for the target processing state (designvalue), since the setting conditions of the other processing devices PRcan be dynamically changed according to the processing error E, it ispossible to continuously manufacture an electronic device of stablequality without stopping the manufacture line. Furthermore, in apatterning device such as an exposure device (drawing device) EX or aninkjet printing device, overlapping exposure and overlapping printing isperformed on a pattern of an underlying layer already formed on thesubstrate P, as the processing device PR. The overlapping precision isparticularly important when creating a layer structure of a thin filmtransistor (gate electrode layer, insulating device, semiconductorlayer, source/drain electrode layer) and the like. For example, in thelayer structure of the thin film transistor, the relative overlappingprecision between layers and the fidelity of the pattern dimensions(line width reproducibility) depends on the performance (positioningprecision, amount of exposure, amount of ink discharge, and the like) ofthe patterning device. The performance of the patterning device, ingeneral, gradually deteriorates, unless it suddenly deterioratessignificantly due to some serious trouble. According to the firstembodiment, since the state of the patterning device that graduallydeteriorates as such is monitored and the processing condition of theother processing devices PR is adjusted, when the performance of thepatterning device fluctuates within the permissible range, or even whenreaching outside of the permissible range, the dimension (line width)precision of the pattern finally formed on the substrate P can be keptwithin the target range.

Note that in the present first embodiment, the conveying speed of thesubstrate P on the processing device PR3 can be freely changed bydisposing the first storage device BF1 and the second storage device BF2before or after the processing device PR3, for example, the firststorage device BF1 and the second storage device BF2 may be disposedbefore and after the processing device PR2 or the processing device PR4so that the conveying speed of the substrate P on the processing devicePR2 or the processing device PR4 may be freely changed. Furthermore, forexample, the conveying speed of the substrate P in a plurality ofprocessing devices PR can be freely changed by disposing the firststorage device BF1 and the second storage device BF2 before and after aplurality of processing devices PR. Thus, changing the conveying speedcondition of each of the plurality of the processing devices PR meansthat the actual processing state of each processing device PR ischanged. For example, in relation to the processing device PR2, evenwithout changing the processing condition including the film thicknesscondition, the film thickness of the formed photosensitive functionallayer is thickened by slowing down the conveying speed condition.Conversely, the film thickness of the formed photosensitive functionallayer can become thinner by speeding up the conveying speed condition.Furthermore, in relation to the processing devices PR4 and PR5, evenwithout changing processing condition such as the immersion timecondition, the time that the substrate P is immersed in the developmentfluid or the etching fluid can be effectively lengthened by slowing downthe conveying speed condition. Conversely, the time that the substrate Pis immersed in the development fluid or the etching fluid can beeffectively shortened by speeding up the conveying speed condition. Inthis case as well, the setting of the conveying speed condition for eachprocessing device PR is changed so that the storage length of both thefirst storage device BF1 and the second storage device BF2 is keptwithin a predetermined range.

Furthermore, in step S3 of FIG. 7, it is determined whether the amountof exposure is within a permissible range, and it may be determinedwhether the line width of the pattern formed on the photosensitivefunctional layer is within a permissible range. In this case, whendetermined that the line width of the pattern is not within apermissible range, it is determined if the processing error E3 isgenerated in the processing device PR3 in step S4, and if it isdetermined that the line width of the pattern is within a permissiblerange, step S5 is skipped and it proceeds to step S7. Therefore, in thiscase, the operation of step S5 and step S6 is unnecessary. Although theline width of the pattern is changed according the condition of thedevelopment processing, since it is considered that the line width ofthe pattern changes significantly according to the actual processingstate of the processing device PR3, it is determined whether theprocessing error E3 is generated in the processing device PR3 based onthe line width of the pattern formed on the photosensitive functionallayer.

Furthermore, the line width change of the pattern formed on thephotoresist layer after development is relatively sensitive to thechange of amount of exposure and change in thickness of the resistlayer, and has linearity. In contrast, the photosensitive functionallayer on a photosensitive silane coupling material or the like ischanged from a non-reformed state to a reformed state depending onwhether a constant amount of exposure (illuminance) is applied,essentially irrespective of the thickness. Thus, it is actuallydifficult to correct the line width by adjusting the thickness of thephotosensitive functional layer or by adjusting the amount of exposure.However, when a more than necessary amount of exposure is applied, thereis a tendency for the line width of the portion to be reformed to becomeslightly thicker. Therefore, when using a photosensitive functionallayer such as a photosensitive silane coupling material or the like, forexample, it is effective to correct the condition of the platingprocessing and correct (correct drawing data) the line width itself ofthe pattern when exposing the photosensitive functional layer, to thedesign value based on the measured value of the line width of themetallic pattern precipitated after the plating processing.

As described above, according to the first embodiment of the presentinvention, among the plurality of processing devices PR, when there is aprocessing device PR in which the actual processing state is generatingthe processing error E of the target processing state, since the settingconditions of the other processing devices PR are changed according tothe processing error E, it is possible to continuously manufacture anelectronic device without stopping the manufacture line. That is, in theprocess of sequentially forming the layer structure and the patternshape of the electronic device on the sheet substrate P using aplurality of processing devices PR, even when the actual processingresult by a specific processing device PR generates an error in thepreset setting conditions (design value), the specific processing devicePR itself not only controls itself to suppress the error, but the otherprocessing devices PR disposed on the upstream side or downstream sidewith respect to the specific processing devices dynamically changes theprocessing condition so as to effectively cancel or suppress the defectcaused by the error. Thus, it is possible to greatly suppress theprobability of processing interruption of the processing device PR andtemporary stoppage of the entire manufacture line caused by errorsgenerated by some process in the manufacture line.

Furthermore, the first embodiment of the present invention is notlimited to a manufacturing line in which three different processingdevices PR (processing portions) are always aligned in the conveyingdirection (length direction) of the substrate P, but can be applied aslong as at least two processing devices PR (processing portions) forsequentially processing the substrate P are aligned. In that case, eachof the processing conditions in the two processing devices PR may bedynamically adjusted, or the conveying speed of the substrate P in eachof the two processing devices PR may be temporarily changed in order toeffectively cancel or suppress a defect (line width change or the like)caused by an error generated from the preset setting conditions. In thiscase, the two processing devices PR (processing portions) applied by thefirst embodiment do not necessarily need to be disposed one after theother in the conveying direction (length direction) of the substrate P,but may be configured having at least one other processing device PR(processing portion) disposed between two processing devices PR(processing portion) applied by the first embodiment. For example, whenperforming the development processing after the exposure processing, inthe first embodiment, the substrate P is immediately sent to thedevelopment portion via the exposure portion, but when developing afterperforming a post-bake processing in which a photoresist layer is heatedat a relatively high temperature after exposure, a heating device(heating portion) and the like for the post-bake processing maycorrespond to the other processing device PR.

Note that in the first embodiment, in order to simplify the description,a description is given by example where one processing device PR whereinthe actual processing state exhibits a processing error E that exceedsthe permissible range for the target processing state, but it may alsohave two or more processing devices PR wherein the actual processingstate exhibits a processing error E that exceeds the permissible rangefor the target processing state. In this case, as described above, whenthe processing devices PR in which the processing error E occurs doesnot include the processing devices PR3, the setting conditions of theprocessing device PR3 is preferentially changed. Furthermore, when theprocessing device PR generating the processing error E includes theprocessing device PR3, first, the setting conditions of the processingdevice PR3 is changed.

Variation of the First Embodiment

The first embodiment may be varied as described below.

Variation 1

In the first embodiment described above, each of the plurality ofprocessing devices PR (PR1 to PR5) disposed in the device manufacturesystem (manufacture line) illustrated in FIG. 1 can adjust the conveyingspeed of the sheet-shaped substrate P passing through each processingdevice during the processing operation according to the adjustment ofthe processing condition or the setting conditions of each processingdevice PR. However, the conveying speed of the substrate P passingthrough each processing device PR is made constant for each processingdevice PR, and it may be configured so that the excess or deficiency ofthe amount of conveying (conveying length) of the substrate P caused bythe difference in conveying speed of the substrate P between theprocessing devices PR is absorbed by the first storage device BR1 or thesecond storage device BR2 provided between the processing device PR. Insuch a configuration, the permissible range in the difference ofconveying speed for the substrate P between the processing devices PR isroughly determined by the total length Lf of the substrate P to becontinuously processed, and the maximum storage length of the firststorage device BF1 or the second storage device BF2.

For example, the conveying speed of the substrate P in the processingdevice PR2 on the upstream side of the first storage device BF1 is Va,the conveying speed of the substrate P in the processing device PR3(patterning device such as the exposure device EX) on the downstreamside of the first storage device BF1 (that is, upstream side of thesecond storage device BF2) is Vb, and the conveying speed of thesubstrate P in the processing device PR4 (or processing device PR5 onthe downstream side of the second storage device BF2 is Vc. In thiscase, when the required storage length Lac1 of the first storage deviceBF1 required during continuous processing of the substrate P over thetotal length Lf has a relationship between conveying speeds Va and Vbwhere Va>Vb, Lac1=Lf (1−Vb/Va), and when Vb>Va, Lac1=Lf (1−Va/Vb).Similarly, when the required storage length Lac2 of the first storagedevice BF2 required during continuous processing of the substrate P overthe total length Lf has a relationship between conveying speeds Vb andVc where Vb>Vc, Lac2=Lf (1−Vc/Vb), and when Vc>Vb, Lac2=Lf (1−Vb/Vc).

Thus, if the target conveying speeds Va, Vb, and Vc of the substrate Pappropriately set under processing conditions of each of the processingdevices PR2 to PR4 are determined, from the above calculation, therequired storage length Lac1 of the first storage device BF1 and therequired storage length Lac2 of the second storage device BF2 areobtained, and the maximum storage length of each of the first storagedevice BF1 and the second storage device BF2 are adjusted so that therequired storage length Lac1 and Lac2 can be secured. The adjustment ofthe maximum storage length can be performed by causing the number oftimes (number of dancer rollers 20 and 22 supporting the substrate P)for folding the substrate P to differ between the plurality of dancerrollers 20 in the first storage device BF1 in FIG. 3, and the pluralityof dancer rollers 22 in the second storage device BF2. Reducing thenumber of time for folding the substrate P by the dancer rollers 20 and22 is preferable since it reduces the possibility of damaging the thinfilm layer and the pattern for the electronic device formed on thesubstrate P, and the possibility of adhering to a foreign substance(dust). Furthermore, the position of the individual dancer rollers 20and 22 can be changed according to the maximum storage length. In otherwords, by individually moving each of the dancer rollers 20 and 22 inthe Z direction, an actuator that can adjust the position is provided inthe first storage device BF1 and the second storage device BF2. Theactuator is controlled by the upper control device 14 or the lowercontrol device 24.

Note that the first storage device BF1 illustrated in FIG. 3 (similar tothe second storage device BF2) can be configured to be removable as asingle unit or to be expandable in tandem (in series). Therefore, whenthe necessary storage length Lac1 (Lac2) obtained by the calculationabove becomes long, the maximum storage length of the substrate P can beeasily increased by connecting a plurality of first storage devices BF1(second storage devices BF2) in tandem. Thereafter, the tip end of thesubstrate P drawn out from a supply roll FR1 sequentially passes throughthe processing devices PR1 to PR5 and the storage devices BF1 and BF2,and is wound around a collection roll FR2, and after the storage lengthof the substrate P in the storage devices BF1 and BF2 are set, theprocessing operation (conveying of the substrate P at conveying speedsVa, Vb, and Vc) are started by the processing devices PR1 to PR5. Alsoin the case of variation 1, while each of the processing devices PR2 toPR4 continue to convey the substrate P at a set constant conveying speedVa, Vb, and Vc, when the quality of the pattern formed on the substrateP, for example, is sensed to be changing (decreasing) based on the imagedata analysis results of the pattern due to the imaging device 83 inFIG. 6, a determination of whether the processing condition (settingconditions) other than the conveying speed of each of the processingdevices PR2 to PR4 can be changed, identification of the processingdevice PR in which the processing condition can be changed, and thecalculation of degree the condition can be changed, for example, isappropriately performed by the upper control device 14. The uppercontrol device 14 instructs the specified processing device PR of thechanged content in the setting conditions, the changed timing, and thelike. Thus, quality (such as fidelity and uniformity of shape anddimensions) of a pattern and the like for an electronic device formed onthe substrate P can be kept within a predetermined permissible rangeover the total length Lf of the substrate P.

Variation 2

When the first storage device BF1 (second storage device BF2) is notincreased, since the maximum total length of one of the first storagedevices BF1 (second storage devices BF2) is limited, if the total lengthLf of the substrate P to be continuously processed is long or the ratioVa:Vb (Vb:Vc) of the conveying speed is large, the storage length of thesubstrate P in the first storage device BF1 (second storage device BF2)becomes full or the storage length becomes zero during the continuousprocessing over the total length Lf. Thus, in variation 2, the conveyingspeeds Va, Vb, and Vc of the substrate P in each of the processingdevices PR2 to PR4 are preset so as to perform continuous processing ofthe substrate P over the total length Lf without being delayed(temporarily stopped) based on a maximum storage length Lm1 and Lm2 ofthe predetermined first storage device BF1 and second storage deviceBF2. That is, each of the conveying speeds Va, Vb, and Vc are preset sothat the maximum total length Lm1 of the first storage device BF1satisfies the condition of Lm1>Lf (1−Vb/Va), or Lm1>Lf (1−Va/Vb), andthe maximum total length Lm2 of the second storage device BF2 satisfiesthe condition of Lm2>Lf (1−Vc/Vb), or Lm2>Lf (1−Vb/Vc).

Also, each of the processing devices PR2 to PR4 pre-adjust the settingconditions of each portion so as to perform the optimal processing atthe conveying speeds Va, Vb, and Vc of the set substrate P. While thesubstrate P of at least the total length Lf is continuously processed,that is, while each of the processing devices PR2 to PR4 continuouslyconvey the substrate P at a set conveying speed Va, Vb, and Vc, in thecase that it is sensed that the quality of the pattern formed on thesubstrate P tends to decrease, the substrate P can be processed whileappropriately performing, for example, a determination of whether theprocessing condition (setting conditions) other than the conveying speedof each of the processing devices PR2 to PR4, identification of theprocessing device PR that can change the processing condition,calculation of the degree the condition is to be changed, and the like,using the upper control device 14. Thus, quality (such as fidelity anduniformity of shape and dimensions) of a pattern and the like for anelectronic device formed on the substrate P can be kept within apredetermined permissible range over the total length Lf of thesubstrate P.

Furthermore, as in variation 1 and variation 2, after pre-setting theconveying speeds Va, Vb, and Vc of the substrate P in each of theprocessing devices PR2 to PR4, and after starting continuous processingover the total length Lf of the substrate P, for example, when thequality of the pattern appearing after the processing device PR4 (PR5)fluctuates for the target value due to the thickness of the resist layercoated by the processing device PR2 fluctuating, each processingcondition (setting conditions) in each of the processing device PR3 andthe processing device PR4 (PR5) is adjusted. At that time, as in thefirst embodiment described above, it is possible to transition to acontrol method incorporating a mode for finely adjusting the conveyingspeeds Vb and Vc of the substrate P preset in the processing device PR3and the processing device PR4. Note that variation 1 and variation 2have been described on the assumption of the three processing devicesPR2, PR3, and PR4 (PR5) and the two storage devices BF1 and BF2, but cansimilarly be applied even to a manufacturing system configured by one ofthe storage devices provided between two of the processing devices PR.Furthermore, in variation 1 and variation 2, the conveying speeds Va,Vb, and Vc of the substrate P in each of the processing devices PR2 toPR4, if possible, are preferably set equal to each other within apredetermined permissible range (for example, within ±several %).

In the above variation 1 and variation 2, when forming a pattern for anelectronic device on the substrate P while conveying the long flexiblesheet-shaped substrate P along the length direction, a devicemanufacture method is performed that can reduce the possibility ofstopping the entire manufacture line by: performing a conveying processfor conveying a substrate P in the order of a first processing processfor performing a different processing to the substrate P (for example, afilm forming process in the processing device PR2) and a secondprocessing process (for example, an exposure process in the processingdevice PR3, and a developing process, plating process, and the like inthe processing devices PR4 and PR5); selectively or uniformly depositinga coating layer (photosensitive functional layer) on the surface of thesubstrate P under the first processing conditions set in the processingdevice PR of the first processing process; generating a reformed portioncorresponding to the pattern on the coating layer, and causing a patternto appear on the substrate P by performing a processing for removingeither one of the reformed portion and the non-reformed portion, or aprocessing for precipitating a material for an electronic device oneither one of the reformed portion and the non-reformed portion, underthe second processing conditions set on the processing device PR of thesecond processing process; and determining whether at least one of thecondition of the first processing conditions and the second processingconditions have been changed depending on the trend, when the patternappearing in the second processing process displays a tendency tofluctuate with respect to the target shape or dimension (a tendency forthe quality to decrease). That is, when determined that at least one ofthe conditions of the first processing conditions and the secondprocessing conditions have changed, it means that it can notify inadvance if the operation of the manufacture line for maintaining thequality of the pattern formed on the substrate P can be continued. Thus,it is possible for the operator at the production site to avoid stoppingthe manufacture line at an early stage. This also applies to the firstembodiment described above.

Second Embodiment

A second embodiment will now be described. The same configuration as theaforementioned first embodiment will be denoted by the same referencenumerals, and a description thereof will be omitted. FIG. 10 is aschematic configuration illustrating a schematic configuration of thedevice manufacturing system 10 according to the present secondembodiment. Note that in FIG. 10, the illustration of the first storagedevice BF1 and the second storage device BF2 is omitted.

The device manufacturing system 10 has an information forming device STfor forming (applying) information in the substrate P, and aninformation collecting device 90 for collecting information by readingthe information formed (applied) by the substrate P. The informationforming devices ST (ST1 to ST5) may form information by printing on thesubstrate P using an inkjet method, or may form information by markingon the substrate P. Furthermore, the information forming devices ST (ST1to ST5) may form the content of the information desired to be formed onthe substrate P as is, and may form content of the formed information onthe substrate by encryption (for example, bar code, QR code).

The information forming device ST1 forms information relating to theprocessing state, which the processing device PR1 performed on thesubstrate P, on the substrate P. The processing state, which theprocessing device PR1 performed on the substrate P, is the actualprocessing state such as the voltage applied for emitting plasma and theirradiation time that the plasma is irradiated. The information formingdevice ST1 forms information on the substrate P relating to theprocessing state of the processing device PR1 in the substrate P,according to the control of the lower control device, not illustrated,or the upper control device 14 of the processing device PR1. Theinformation forming device ST1 may be provided between the processingdevice PR1 and the processing device PR2 along the conveying directionof the substrate P, and may be provided on the inner portion of theprocessing device PR1. The information forming device ST1 may forminformation on the substrate P relating to the processing state, whichthe processing state PR1 applied to the electronic device region W, foreach electronic device region W, and may form information on thesubstrate P relating to the processing state applied to the electronicdevice region W when there is a tendency for the processing stateapplied to the electronic device region W to change beyond a certainrange.

The information forming device ST2 forms information relating to theprocessing state, which the processing device PR2 performed on thesubstrate P, and the processing error E2 on the substrate P. Theprocessing state, which the processing device PR2 performs on thesubstrate P, is the actual processing state such as the film thicknessof the photosensitive functional layer actually deposited. Theprocessing error E2 is the process error or the like for the target filmthickness condition of the film thickness on the photosensitivefunctional layer actually deposited. The information forming device ST2forms information on the substrate P relating to the processing state ofthe processing device PR2 and the processing error E2, according to thecontrol of the lower control device 18 or the upper control device 14 ofthe processing device PR2. The information forming device ST2 may beprovided between the processing device PR2 and the first storage deviceBF1, or the processing device PR3, along the conveying direction of thesubstrate P, and may be provided on the inner portion of the processingdevice PR2, which is on the downstream side of a drying device 16. Theinformation forming device ST2 may form information on the substrate Prelating to the processing state and the processing error E2, which theprocessing state that the processing device PR2 applied to theelectronic device region W, for each electronic device region W, and mayform information on the substrate P relating to the processing state andthe processing error E2 applied to the electronic device region W whenthere is a tendency for the processing state and the processing error E2applied to the electronic device region W to change beyond a certainrange.

The information forming device ST3 forms information relating to theprocessing state, which the processing device PR3 performed on thesubstrate P, and the processing error E3 on the substrate P. Theprocessing state, which the processing device PR3 performed on thesubstrate P, is the actual processing such as the strength of the laserlight LB and the scanning speed of the spot light SP. The processingerror E3 is the processing error for the target strength condition ofthe strength of the laser light LB actually irradiated, the processingerror for the target scanning speed condition of the scanning speed ofthe spot light SP, and the like. The information forming device ST3forms information on the substrate P relating to the processing state ofthe processing device PR3 and the processing error E3, according to thecontrol of the lower control device 24 or the upper control device 14 ofthe pattern forming device 12. The information forming device ST3 may beprovided between the processing device PR3 and the second storage deviceBF2, or the processing device PR4, along the conveying direction of thesubstrate P, and may be provided on the inner portion of the processingdevice PR3, which is on the downstream side of a rotation drum DR2. Theinformation forming device ST3, for each electronic device region W, mayform information on the substrate P relating to the processing state andthe processing error E3, where the processing state is applied to theelectronic device region W by the processing device PR3, and may forminformation on the substrate P relating to the processing state and theprocessing error E3, where the processing state is applied to theelectronic device region W when there is a tendency for the processingstate and the processing error E3 applied to the electronic deviceregion W to change beyond a certain range.

The information forming device ST4 forms information relating to theprocessing state, which the processing device PR4 performed on thesubstrate P, and the processing error E4 on the substrate P. Theprocessing state, which the processing device PR4 performed on thesubstrate P, is the actual processing state such as the temperature,concentration, immersion time, and the like of the development fluid.The processing error E4 is the processing error for the targettemperature condition of the actual development fluid, the processingerror for the target concentration condition of the concentration of theactual development fluid, the processing error for the target immersiontime condition of the actual immersion time, and the like. Theinformation forming device ST4 forms information on the substrate Prelating to the processing state of the processing device PR4 and theprocessing error E4, according to the control of the lower controldevice 80 or the upper control device 14 of the processing device PR4.The information forming device ST4 may be provided between theprocessing device PR4 and the processing device PR5, along the conveyingdirection of the substrate P, and may be provided on the inner portionof the processing device PR4, which is on the downstream side of a guideroller R7. The information forming device ST4 may form information onthe substrate P relating to the processing state and the processingerror E4, which the processing state that the processing device PR4applied to the electronic device region W, for each electronic deviceregion W, and may form information on the substrate P relating to theprocessing state and the processing error E4 applied to the electronicdevice region W when there is a tendency for the processing state andthe processing error E4 applied to the electronic device region W tochange beyond a certain range.

The information forming device ST5 forms information relating to theprocessing state, which the processing device PR5 performed on thesubstrate P, and the processing error E5 on the substrate P. Theprocessing state, which the processing device PR5 performed on thesubstrate P, is the actual processing state such as the temperature,concentration, immersion time, and the like of the etching fluid. Theprocessing error E5 is the processing error for the target temperaturecondition of the actual etching fluid, the processing error for thetarget concentration condition of the concentration of the actualetching fluid, the processing error for the target immersion timecondition of the actual immersion time, and the like. The informationforming device ST5 forms information on the substrate P relating to theprocessing state of the processing device PR5 and the processing errorE5, according to the control of the lower control device 80 or the uppercontrol device 14 of the processing device PR5. The information formingdevice ST5 may be provided on the downstream side of the processingdevice PR5, along the conveying direction of the substrate P, and may beprovided on the inner portion of the processing device PR5, which is onthe downstream side of a guide roller R7. The information forming deviceST5, for each electronic device region W, may form information on thesubstrate P relating to the processing state and the processing errorE5, where the processing state is applied to the electronic deviceregion W by the processing device PR5, and may form information on thesubstrate P relating to the processing state and the processing errorE5, where the processing state is applied to the electronic deviceregion W when there is a tendency for the processing state and theprocessing error E5 applied to the electronic device region W to changebeyond a certain range.

The information forming devices ST1 to ST5, as illustrated in FIG. 11,forms information in a region other than the electronic devices region Wof the substrate P. Si1 of FIG. 11 indicates the information formed bythe information forming device ST1, and Si2 indicates information formedby the information forming devices ST2. Similarly, Si3, Si4, and Si5indicates information formed by the information forming devices ST3,ST4, and ST5. The information forming devices ST1 to ST5 forminformation Si1 to Si5 in a region on substrates P differing from eachother. Thus, it can be easily recognized which information formingdevice ST1 to ST5 formed the information based on the region in whichthe information S1 was formed on the substrate P.

Note that the information Si1 to Si5 formed on the substrate P may beformed inside the electronic device region W. In that case, theformation surface area of the information Si1 to Si5 is made to besufficiently small, disposed in a blank region inside the electronicdevice region W so as to not affect wiring and semiconductor element forthe devices, or the pixel region and the like, in the electronic devicesregion W. Alternatively, when a relatively large electrode pad is formedfor connecting to an external circuit in the electronic device region W,the information Si1 to Si5 may be formed inside that pad.

The information collecting device 90 is provided with informationreading portions MT (MT1 to MT5) for reading the information S1 formed(applied) on the substrate P, and an information collecting portion 92for collecting the information S1 read by the information readingportions (MT1 to MT5). The information reading portions MT (MT1 to MT5)read the information S1 formed on the substrate P by imaging thesubstrate P. The information reading portion MT1 reads information S1relating to the processing state or the processing error performed onthe substrate P in a process prior to the processing device PR1,according to the control of the lower control device, not illustrated,or the upper control device 14 of the processing device PR1. Theinformation reading portion MT1 may be provided on the upstream side ofthe processing device PR1 along the conveying direction of the substrateP, and may also be provided on the inner portion of the processingdevice PR1.

The information reading portion MT2 reads information Si1 relating tothe processing state that the information forming device ST1 formed onthe substrate P, according to the control of the lower control device 18or the upper control device 14 of the processing device PR2. Theinformation reading portion MT2 may be provided on the downstream sideof the information forming device ST1, between the processing device PR1and the processing device PR2 along the conveying direction of thesubstrate P. Note that since the information reading portion MT2 may beprovided downstream from the information forming device ST1, forexample, it may also be provided in the interior of the processingdevices PR2. The information reading portion MT3 reads information Si2relating to the processing state or the processing error E2 that theinformation forming device ST2 formed on the substrate P, according tothe control of the lower control device 24 or the upper control device14 of the pattern forming device 12. The information reading portion MT3is provided downstream from the information forming device ST2, betweenthe processing devices PR2 or the first storage device BF1 and theprocessing device PR3 along the conveying direction of the substrate P.Note that since the information reading portion MT3 may be provideddownstream from the information forming device ST2, for example, it mayalso be provided in the interior of the processing devices PR3.

The information reading portion MT4 reads information Si3 relating tothe processing state or the processing error E3 that the informationforming device ST3 formed on the substrate P, according to the controlof the lower control device 80 or the upper control device 14 of theprocessing device PR4. The information reading portion MT4 is provideddownstream from the information forming device ST3, between theprocessing devices PR3 or the second storage device BF2 and theprocessing device PR4 along the conveying direction of the substrate P.Note that since the information reading portion MT4 may be provideddownstream from the information forming device ST3, for example, it mayalso be provided in the interior of the processing devices PR4. Theinformation reading portion MT5 reads information Si4 relating to theprocessing state or the processing error E4 that the information formingdevice ST4 formed on the substrate P, according to the control of thelower control device 80 or the upper control device 14 of the processingdevice PR5. The information reading portion MT5 may be provideddownstream side from information forming device ST4, between theprocessing device PR4 and the processing device PR5 along the conveyingdirection of the substrate P. Note that since the information readingportion MT5 may be provided downstream from the information formingdevice ST4, for example, it may also be provided in the interior of theprocessing devices PR5. The information Si5 that the information formingdevice ST5 formed on the substrate P is read when performing aprocessing of the following process.

The information collecting portion 92 collects the information S1 readby the information reading portions MT1 to MT5, and outputs it to theupper control device 14. The upper control device 14 can determinewhether the actual processing state of each of the processing devicesPR1 to PR5 generates a processing error E that exceeds the permissiblerange for the target processing state based on information S1 read fromthe information reading portions MT1 to MT5, and when the processingerror E is generated that exceeds the permissible range, the settingconditions of the processing devices PR is changed as described in thefirst embodiment. In the present second embodiment, the information Si1to Si5 relating to the processing state or the processing error E, whicheach processing device PR1 to PR5 in each of the electronic deviceregions W performed in the electronic device region W, is formed on thesubstrate P, or when there is a tendency for the processing state or theprocessing error E performed in the electronic device region W changebeyond a certain range, the information Si1 to Si5 relating to theprocessing state or the processing error E that each processing devicePR1 to PR5 performed in the electronic device region W is formed on thesubstrate P. Therefore, the upper control device 14 can easily managethe processing state or the processing error E applied by eachprocessing device PR1 to PR5 in each electronic device region W.Therefore, the pattern formed on each electronic device region W can bethe desired pattern.

Furthermore, since the substrate P is a sheet-like substrate, when thepattern for the electronic device formed on the device forming region Wof the substrate P is defective, the substrate P is cut and a portion ofthe substrate (defective portion, for example, defective device formingregion W portion) is removed, and there are cases where the remainingsubstrate P is joined and becomes one substrate P. Furthermore, thereare also cases where another substrate P is connected to the portion cutand removed and joined to the substrate P. Thus, by cutting and joiningthe substrate P, the order of the electronic device W changessignificantly, making it difficult to understand the actual processingstate performed in each electronic device region W. For example, theelectronic device regions W in the order of 1, 2, 3, 4, 5, 6, 7, . . .cuts and removes the fourth and fifth electronic device regions W of thesubstrate P connected along the length direction of the substrate P, andinstead, the electronic device regions W in the order of a, b, c, d, . .. are connected to the substrate P connected along the length directionof the substrate P, and the electronic device regions W are connected inthe order of 1, 2, 3, a, b, c, d, 6, 7, . . . , becoming a singlesubstrate P. In this case, it is difficult to understand the actualprocessing state applied to each electronic device region W of thesubstrate P, but in the second embodiment, since the state relating tothe processing state of the processing error E of each processing devicePR1 to PR5 is formed on the substrate P, even in such a case, it ispossible to easily understand the actual process state applied to eachelectronic device region W.

As described above, according to the second embodiment of the presentinvention, among the plurality of processing devices PR1 to PR5, sincethere is a processing device PR in which the actual processing stategenerates the processing error E of the target processing state, theprocessing device PR that particularly performs the post-process cancontinuously perform the post-process by determining whether theprocessing error E generated in a prior process can be recovered byreading information on the substrate, and deriving the processingcondition when recovery is possible. Thus, it is possible tocontinuously manufacture an electronic device without stopping themanufacture line.

Furthermore, the second embodiment of the present invention is notlimited to a manufacturing line in which three different processingdevices PR (processing portions) are always aligned in the conveyingdirection (length direction) of the substrate P, but can be performed aslong as at least two processing devices PR (processing portions) forsequentially processing the substrate P are aligned. In this case, thetwo processing devices PR (processing portions) applied by the secondembodiment do not necessarily need to be disposed one behind the otherin the conveying direction (length direction) of the substrate P, butmay be configured having at least one other processing devices PR(processing portion) disposed between two applied processing devices PR(processing portions). For example, when performing the developmentprocessing after the exposure processing, the substrate P is notimmediately sent to the development portion via the exposure portion,but when developing after performing a post-bake processing in which aphotoresist layer is heated at a relatively high temperature afterexposure, a heating device (heating portion) and the like for thepost-bake processing may correspond to the other processing device PR.

Variations of the First and Second Embodiment

The first and second embodiment may have the following variations.

Variation 1

In variation 1, the processing device PR3 and the processing device PR4is configured as one processing unit PU2. In other words, the processingunit PU2 is a device for performing a processing process of exposureprocessing and development processing (second processing process) whileconveying the substrate P conveyed from the processing device PR2 in theconveying direction (+X direction). The latent image (reformed portion)corresponding to the pattern is formed by this exposure processing onthe photosensitive functional layer, and either one of the reformedportion or the non-reformed portion is dissolved and removed by thedevelopment processing, whereby a pattern appears on the photosensitivefunctional layer. Note that the processing unit PU2 may be a device forperforming a processing process of an exposure processing and a platingprocessing, and in this case, the material (metal) for the electronicdevice such as a palladium ion is precipitated on either one of thereformed portion or the non-reformed portion by the plating processing.

FIG. 12 is a view illustrating the configuration of the processing unitPU2. The configurations the same as the first and second embodiment willbe denoted by the same reference numeral and a description thereof willbe omitted, and the illustrations for the configuration that are notparticularly necessary for describing variation 1 will be omitted. Theprocessing unit PU2 is provided with a conveying portion 100, exposurehead 36, processing tank BT, and drying portion 102. Note that, althoughnot illustrated in the drawings, the processing unit PU2 also has alight source device 32, a light induction optical system 34, a strengthsensor 37, alignment microscopes AM (AM1 to AM3), heaters H1 and H2, aheater driving portion 82, a temperature sensor Ts, a concentrationsensor Cs, an imaging device 83, and the like. Furthermore, theprocessing unit PU2 is controlled using the lower control device, notillustrated. The first storage device BF1 is provided between theprocessing device PR2 and the processing unit PU2, and the secondstorage device BF2 is provided between the processing unit PU2 and theprocessing device PR5.

The conveying portion 100 has a drive roller NR10, a tension adjustingroller RT10, a rotation drum DR2, a guide roller R10, a rotation drumDR3, a guide roller R12, a tension adjusting roller RT12, and a driveroller NR12 in order from the upstream side (−X direction side) of theconveying direction of the substrate P. The drive roller NR10 conveysthe substrate P toward the rotation drum DR2 by rotating whilesandwiching the front and back surfaces of the substrate P sent from theprocessing device PR2 via the first storage device BF1. The rotationdrum DR2 conveys the substrate P to the guide roller R10 by rotatingaround central axis AX2 while supporting one portion of the substrate Pin the length direction following the outer peripheral surface. Theguide roller R10 guides the substrate P sent from the rotation drum DR2to the rotation drum DR3.

The rotation drum DR3 has a central axis AX3 extending in the Ydirection, and a cylindrical circumferential surface with a constantradius from the central axis AX3, and guides the substrate P to theguide roller R12 by rotating around the central axis AX3 whilesupporting one portion of the substrate P in the length directionfollowing the outer peripheral surface (circumferential surface). Therotation drum DR3 supports the substrate P by approximately half thecircumferential surface of the outer peripheral surface on the lowerside (−Z direction side, that is, the direction in which gravity acts).The guide roller R12 conveys the sent substrate P toward the driveroller NR12. The drive roller NR12 conveys the substrate P to theprocessing device PR5 side by rotating while sandwiching the front andback surface of the sent substrate P. The tension adjusting rollers RT10and RT12 apply a predetermined tension to the substrate P conveyedbetween the drive roller NR10 and the drive roller NR12. The tensionadjusting roller RT10 is biased in the +Z direction, and the tensionadjusting roller RT12 is biased in the −Z direction.

The drive rollers NR10 and NR12, and the rotation drums DR2 and DR3rotate due to a rotation torque applied from the rotating drive source(motor or reducer and the like) controlled by the lower control deviceof the processing unit PU2. The conveying speed of the substrate P inthe processing unit PU2 is defined by the rotating speed of the driveroller NR10 and NR12, and the rotation drum DR2 and DR3. Furthermore,the rotation speed signal (conveying speed information of the substrateP) sent from an encoder, not illustrated, provided in the drive rollerNR10 and NR12, and the rotation drum DR2 and DR3, is sent to the uppercontrol device 14 via the lower control device of the processing unitPU2.

The rotation drum DR3 is provided above the processing tank BT so thatone portion of the circumferential surface is immersed in thedevelopment fluid kept in the processing tank BT. Therefore, thesubstrate P supported by the rotation drum DR3 can be immersed in thedevelopment fluid. Furthermore, the rotation drum DR3 (or processingtank BT) can move in the Z direction, the surface on which thecircumferential surface of the rotation drum DR3 is immersed in thedevelopment fluid kept in the processing tank BT is reduced when therotation drum DR3 moves in the +Z direction (or the processing tank BTmoves in the −Z direction), and the surface on which the circumferentialsurface of the rotation drum DR3 is immersed in the development fluidkept in the processing tank BT is increased when the rotation drum DR3moves in the −Z direction (or the processing tank BT moves in the +Zdirection). Thus, by moving the rotation drum DR3 (or the processingtank BT) in the Z direction, the time that the substrate P is immersedin the development fluid (immersion time) can be changed. Although notillustrated, a driving mechanism for adjusting the interval (intervalbetween the central axis AX3 of the rotation drum DR3 and the surface ofthe development fluid in the processing tank BT) of the Z direction forthe rotation drum DR3 and the processing tank BT is provided in therotation drum DR3 (or processing tank BT), and the driving mechanism isdriven by controlling the lower control device of the processing unitPU2. The guide roller R12 is provided in the drying portion 102, and thedrying portion 102 removes the development fluid adhering to thesubstrate P that is conveyed from the rotation drum DR3 to the tensionadjusting roller RT12 via the guide roller R12.

Note that when the photosensitive functional layer is a photosensitivesilane coupling agent or a photosensitive reducing agent, a platingfluid including a material (metal) for an electronic device such aspalladium ion is kept in the processing tank BT of the processing unitPU2 instead of the development fluid. In other words, in this case, theprocessing unit PU2 is a device for performing the exposure processingand the plating processing. By immersing the substrate P in the platingfluid, the material for the electronic device is precipitatedcorresponding to the latent image (reformed portion) formed on thephotosensitive functional layer, and a pattern is formed on thesubstrate P. In the case of a positive type, the portion whereonultraviolet rays are irradiated is modified, and the material for theelectronic device is precipitated on the non-reformed portion whereonultraviolet rays are not irradiated. In the case of a negative type, theportion whereon ultraviolet rays are irradiated is modified, and thematerial for the electronic device is precipitated on the reformedportion. Thus, a pattern for the metal layer (conductive) appears on thesubstrate P. Here, the interval of the Z direction for the rotation drumDR3 and the processing tank BT is adjusted, the immersion time to theplating fluid of the substrate P can be adjusted by adjusting the amountof plating fluid (fluid surface height) in the processing tank BT, andthe concentration of the palladium to be precipitated on the surface ofthe substrate P can be adjusted.

The processing unit PU2 performs the exposure processing and thedevelopment processing (or plating processing) according to the settingconditions (second setting conditions). Processing conditions (secondprocessing conditions) including: a strength condition for defining thestrength of the laser light LB, a scanning speed condition for definingthe scanning speed (rotation speed of the polygon mirror 66) of the spotlight SP, an exposure frequency condition for defining the frequency ofmultiple exposures, a pattern condition (pattern data) for defining apattern to be drawn, a temperature condition for defining a temperaturefor the development fluid (or plating fluid), a concentration conditionfor defining a concentration of the development fluid (or platingfluid), an immersion time condition for defining the immersion time, andthe like, and a conveying speed condition of the substrate P are set asthe setting conditions of the processing unit PU2. The exposureprocessing is performed according to the strength condition, scanningspeed condition, exposure frequency condition, pattern condition, andthe like. The development processing (or plating processing) isperformed according to the temperature condition, concentrationcondition, immersion time condition, and the like. The actual processingstate applied by the processing unit PU2 of these setting conditions ispreset to be the target processing state.

Since the first embodiment described the change of the settingconditions it will not be described in detail, but when at least one ofthe states of actual processing applied on the substrate P in each ofthe processing devices PR1, PR2, PR5 and the processing unit PU2exhibits a processing error E that exceeds the permissible range for thetarget processing state, the upper control device 14 changes the settingconditions of the other processing device PR or the processing unit PU2generating the processing error E, according to the processing error E.The reason, obviously, is because when any one of the actual processingstates that the processing devices PR1, PR2, PR5 and the processing unitPU2 applied to the substrate P according to the setting conditions has aprocessing error E that exceeds the permissible range for the targetprocessing state, the desired pattern of the metal layer cannot appearon the substrate P.

When the setting conditions exhibiting the processing error E is thesetting conditions of the processing unit PU2, first the settingconditions of the processing unit PU2 is changed so that the processingerror E does not occur, or so that the processing error E falls withinthe permissible range. Then, when it cannot be supported by onlychanging the setting conditions of the processing unit PU2, the settingconditions of the other processing devices PR (PR2 and PR5) are furtherchanged so that the processing error does not occur, or so that theprocessing error falls within the permissible range. At this time, afterthe change of the setting conditions of the other processing devices PRis completed, the conveying speed condition of at least the processingunit PU2 may be restored. Furthermore, when the setting conditionsexhibiting the processing error E is the setting conditions of anotherprocessing device PR other than the processing unit PU2, the settingconditions of the processing unit PU2 is preferentially changed so thatthe processing error E does not occur, or so that the processing error Efalls within the permissible range. The information relating to theactual processing state or the processing error E applied to thesubstrate P by the processing unit PU2 is formed on the substrate P bythe information forming device ST, not illustrated. Furthermore, theinformation is read by the information reading portion MT5. Note thatalthough the first storage device BF1 and the second storage device BF2is provided before and after the processing unit PU2, it may also beprovided before and after another processing device PR.

Note that, as illustrated in FIG. 12, when the exposure processingportion (rotation drum DR2, exposure head 36, and the like) and thewet-type processing portion (rotation drum DR3, processing tank BT, andthe like) is the integrally provided processing unit PU2, the conveyingspeed of the sheet substrate P in the processing unit PU2 is constant,and the conveying speed of the sheet substrate P cannot be temporarilydifferent in the exposure processing portion and the wet-type processingoption. Thus, when wanting the conveying speed of the sheet substrate Pto be different, the storage device BF1 and BF2 is provided asillustrated in FIG. 3 in the position of the guide roller R10. In otherwords, the first storage device BF1 and the second storage device BF2 isprovided before and after the processing unit PU2, and one storagedevice having a configuration similar to the first storage device BF1(second storage device BF2) is provided between the rotation drum DR2and the rotation drum DR3. Furthermore, the first storage device BF1 maybe provided between the processing device PR2 and the rotation drum DR2,and the second storage device BF2 may be provided between the rotationdrum DR2 and the rotation drum DR3. Furthermore, the first storagedevice BF1 may be provided between the rotation drum DR2 and therotation drum DR3, and the second storage device BF2 may be providedbetween the rotation drum DR3 and the processing device PR5.

Variation 2

In variation 2, the processing device PR2 and the processing device PR3is configured as one processing unit PU1. In other words, the processingunit PU1 is a device for performing a processing process of filmformation processing and an exposure processing (first processingprocess) while conveying the substrate P conveyed from the processingdevice PR1 in the conveying direction (+X direction). A photosensitivefunctional fluid is selectively or uniformly coated on the surface ofthe substrate P by this film formation processing, thereby selectivelyor uniformly forming the photosensitive functional layer on the surfaceof the substrate P, and the latent image (reformed portion)corresponding to the pattern is formed on the photosensitive functionallayer.

FIG. 13 is a view illustrating the configuration of the processing unitPU1. The configurations the same as the first and second embodiment willbe denoted by the same reference numeral and a description thereof willbe omitted, and the illustrations for the configuration that are notparticularly necessary for describing variation 2 will be omitted. Theprocessing unit PU1 is provided with a conveying portion 110, die coaterhead DCH, ink jet head IJH, drying portion 112, and exposure head 36.Note that, although not illustrated, the processing unit PU1 also has alight source device 32, a light induction optical system 34, a strengthsensor 37, alignment microscopes AM (AM1 to AM3), film thicknessmeasuring device 16 a, and the like. Furthermore, the processing unitPU1 is controlled using the lower control device, not illustrated. Thefirst storage device BF1 is provided between the processing device PR1and the processing unit PU1, and the second storage device BF2 isprovided between the processing unit PU1 and the processing device PR4.

The conveying portion 110 has a drive roller NR14, a tension adjustingroller RT14, a rotation drum DR1, guide rollers R14 and R16, a tensionadjusting roller RT16, a rotation drum DR2, a guide roller R18, and adrive roller NR16 in order from the upstream side (−X direction side) ofthe conveying direction of the substrate P. The drive roller NR14conveys the substrate P toward the rotation drum DR1 by rotating whilesandwiching the front and back surfaces of the substrate P sent from theprocessing device PR1 via the first storage device BF1. The rotationdrum DR1 conveys the substrate P in the +X direction by rotating aroundcentral axis AX1 while supporting one portion of the substrate P in thelength direction following the outer peripheral surface (circumferentialsurface). The guide rollers R14 and R16 guide the substrate P sent fromthe rotation drum DR1 to the rotation drum DR2.

The rotation drum DR2 conveys the substrate P to the guide roller R18 byrotating around central axis AX2 while supporting one portion of thesubstrate P in the length direction following the outer peripheralsurface. The guide roller R18 guides the substrate P sent from therotation drum DR2 to the drive roller NR16. The drive roller NR16conveys the substrate P to the processing device PR4 side by rotatingwhile sandwiching the front and back surfaces of the sent substrate P.The tension adjusting rollers RT14 and RT16 apply a predeterminedtension to the substrate P conveyed between the drive roller NR14 andthe drive roller NR16. The tension adjusting rollers RT14 and RT16 arebiased in the −Z direction.

The drive rollers NR14 and NR16, and the rotation drums DR1 and DR2rotate due to a rotation torque applied from the rotating drive source(motor or reducer and the like) controlled by the lower control deviceof the processing unit PU1. The conveying speed of the substrate P inthe processing unit PU1 is defined by the rotating speed of the driverollers NR14 and NR16, and the rotation drums DR1 and DR2. Furthermore,the rotation speed signal (conveying speed information of the substrateP) sent from an encoder, not illustrated, provided in the drive rollersNR14 and NR16, and the rotation drum DR1 and DR2, is sent to the uppercontrol device 14 via the lower control device of the processing unitPU1.

The guide roller R14 is provided in the drying device 112, the drivingdevice 112 dries the photosensitive functional fluid by removing thesolute (solvent or water) included in the photosensitive functionalfluid by blowing air for drying such as hot air or dry air for thesubstrate P conveyed from that rotation drum DR1 to the guide roller R16via the guide roller R14. The photosensitive functional layer is formedin this way.

The processing unit PU1 performs the film formation processing accordingto the setting conditions (first setting conditions). Processingconditions (first processing conditions) including: a region conditionfor defining the region in which the photosensitive functional layer isformed, a film thickness condition for defining the film thickness ofthe photosensitive functional layer, a strength condition for definingthe strength of the laser light LB, a scanning speed condition fordefining the scanning speed (rotation speed of the polygon mirror 66) ofthe spot light SP, an exposure frequency condition for defining thefrequency of multiple exposures, a pattern condition (pattern data) fordefining a pattern to be drawn, and the like, and a conveying speedcondition of the substrate P are set as the setting conditions of theprocessing unit PU1. The film formation processing is performedaccording to the region condition, film thickness condition, and thelike. The exposure processing is performed according to the strengthcondition, scanning speed condition, exposure frequency condition,pattern condition, and the like. The actual processing state applied bythe processing unit PU1 of these setting conditions is preset to be thetarget state.

Since the first embodiment described the change of the settingconditions, it will not be described in detail, but when at least one ofthe states of actual processing applied on the substrate P in each ofthe processing devices PR1, PR4, PR5 and the processing unit PU1exhibits a processing error E that exceeds the permissible range for thetarget processing state, the upper control device 14 changes the settingconditions of the other processing device PR or the processing unit PU1generating the processing error E, according to the processing error E.The reason, obviously, is because when any one of the actual processingstates that the processing devices PR1, PR4, PR5 and the processing unitPU1 apply to the substrate P according to the setting conditions has aprocessing error E that exceeds the permissible range for the targetprocessing state, the desired pattern of the metal layer cannot appearon the substrate P.

When the setting conditions exhibiting the processing error E is thesetting conditions of the processing unit PU1, first the settingconditions of the processing unit PU1 is changed so that the processingerror E does not occur, or so that the processing error E falls withinthe permissible range. Then, when it cannot be supported by onlychanging the setting conditions of the processing unit PU1, the settingconditions of the other processing devices PR (PR4 and PR5) are furtherchanged so that the processing error E does not occur, or so that theprocessing error E falls within the permissible range. At this time,after the change of the setting conditions of the other processingdevices PR is completed, the conveying speed condition of at least theprocessing unit PU1 may be restored. Furthermore, when the settingconditions exhibiting the processing error E is the setting conditionsof another processing device PR other than the processing unit PU1, thesetting conditions of the processing unit PU1 is preferentially changedso that the processing error E does not occur, or so that the processingerror E falls within the permissible range. The information relating tothe actual processing state or the processing error E applied to thesubstrate P by the processing unit PU1 is formed on the substrate P bythe information forming device ST, not illustrated. Furthermore, thisinformation is read by the information reading portion MT4. Note thatalthough the first storage device BF1 and the second storage device BF2is provided before and after the processing unit PU1, it may also beprovided before and after another processing device PR.

In the variation 2 described above, as in FIG. 13, since the coatingprocessing portion (rotation drum DR1, die coater head DCH, ink jet headIJH, and the like), drying processing portion (drying device 112 and thelike), exposure processing portion (rotation drum DR2, exposure head 36,and the like), is the integrally provided processing unit PU1, theconveying speed of the substrate P in the processing unit PU1 is thesame everywhere. However, in each of the coating processing portion,drying processing portion, and exposure processing portion, when theconveying speed of the substrate P is temporarily different, forexample, the storage devices BF1 and BF2 provided as illustrated in FIG.3 in the position of the drying processing portion (processing device112 and the like). In other words, the first storage device BF1 and thesecond storage device BF2 is provided before and after the processingunit PU1, and one storage device having a configuration similar to thefirst storage device BF1 (second storage device BF2) is provided betweenthe rotation drum DR1 and the rotation drum DR2. Furthermore, the firststorage device BF1 may be provided between the rotation drum DR1 and therotation drum DR2, and the second storage device BF2 may be providedbetween the rotation drum DR2 and the processing device PR4.Furthermore, the first storage device BF1 may be provided between theprocessing device PR1 and the rotation drum DR1, and the second storagedevice BF2 may be provided between the rotation drum DR1 and therotation drum DR2.

What is claimed is:
 1. A device manufacturing method for conveying a long, flexible sheet substrate along a length direction while forming a pattern for an electronic device on the sheet substrate sequentially along the length direction, comprising: a conveying step for conveying the sheet substrate at a predetermined speed along the length direction through a first processing step and a second processing step, in that order, to implement mutually differing processes relating to the sheet substrate; depositing a coating layer selectively or uniformly on the surface of the sheet substrate under first pre-set processing conditions in the first processing step; causing the pattern to appear on the sheet substrate by implementing removing processing for removing one of either reformed portions or non-reformed portions created on the coating layer corresponding to the pattern under second pre-set processing conditions in the second processing step, or precipitating processing for precipitating a material for electronic devices on one of either the reformed portions or the non-reformed portions; and a determining step for determining the possibility of changing at least one of the conditions of the first processing conditions or the second processing conditions, and the possibility of changing the conveying speed of the sheet substrate of at least one of the first processing step or the second processing step according to the pattern appearing on the sheet substrate during the second processing step exhibiting a tendency to fluctuate from predetermined target shape or dimensions.
 2. The device manufacturing method according to claim 1, wherein a storage length of the sheet substrate in the length direction is determined based on a difference between a speed at which the sheet substrate is conveyed in the first processing step and a speed at which the sheet substrate is conveyed in the second processing step and an entire length of the sheet substrate sequentially processed in the first processing step and the second processing step, and wherein in the conveying step, the storage length is stored in a storage device provided between the first processing step and the second processing step.
 3. The device manufacturing method according to claim 2, wherein in the conveying step, throughout the entire length of the sheet substrate sequentially processed in the first processing step and the second processing step, the speed at which the sheet substrate is conveyed in the first processing step is kept constant and the speed at which the sheet substrate is conveyed in the second processing step is kept constant.
 4. The device manufacturing method according to claim 1, wherein the coating layer is a photosensitive functional layer which is reformable in receipt of energy rays, and the second processing step comprises creating the reformed portions and the non-reformed portions corresponding to the pattern on the photosensitive functional layer by irradiating the photosensitive functional layer deposited on the surface of the sheet substrate with the energy rays corresponding to the pattern.
 5. The device manufacturing method according to claim 4, wherein the photosensitive functional layer is one of photoresist reformed corresponding to the pattern by irradiation of ultraviolet rays as the energy rays, a photosensitive silane coupling agent reformed in hydrophilic and hydrophobic properties corresponding to the pattern by the irradiation of the ultraviolet rays, and a photosensitive reducing agent reformed so as to expose a plating reduction group.
 6. The device manufacturing method according to claim 5, wherein the second processing step implements removing processing in a case where the photosensitive functional layer is photoresist, and precipitating processing in a case where the photosensitive functional layer is the photosensitive silane coupling agent or the photosensitive reducing agent.
 7. The device manufacturing method according to claim 1, wherein the determining step measures the shape and dimensions of the pattern actually appeared on the sheet substrate by the second processing step, and determines whether errors in the measured shape and dimensions have the tendency of fluctuation exceeding an acceptable range set as a target.
 8. A device manufacturing method for conveying a long, flexible sheet substrate along a length direction while forming a pattern for an electronic device on the sheet substrate sequentially along the length direction, comprising: a conveying step for conveying the sheet substrate at a predetermined speed along the length direction through a first processing step and a second processing step, in that order, to implement mutually differing processes relating to the sheet substrate; depositing a coating layer selectively or uniformly on the surface of the sheet substrate and creating a reformed portion and a non-reformed portion corresponding to the pattern on the coating layer under first pre-set processing conditions in the first processing step, causing the pattern to appear on the sheet substrate by implementing removing processing for removing one of either the reformed portions or the non-reformed portions of the coating layer, or precipitating processing for precipitating a material for electronic devices on one of either the reformed portions or the non-reformed portions under second pre-set processing conditions in the second processing step; and a determining step for determining the possibility of changing at least one of the conditions of the first processing conditions or the second processing conditions, and the possibility of changing the conveying speed of the sheet substrate of at least one of the first processing step or the second processing step, according to the pattern appearing on the sheet substrate during the second processing step exhibiting a tendency to fluctuate from predetermined target shape or dimensions.
 9. The device manufacturing method according to claim 8, wherein a storage length of the sheet substrate in the length direction is determined based on a difference between a speed at which the sheet substrate is conveyed in the first processing step and a speed at which the sheet substrate is conveyed in the second processing step and an entire length of the sheet substrate sequentially processed in the first processing step and the second processing step, and wherein in the conveying step, the storage length is stored in a storage device provided between the first processing step and the second processing step.
 10. The device manufacturing method according to claim 9, wherein in the conveying step, throughout the entire length of the sheet substrate sequentially processed in the first processing step and the second processing step, the speed at which the sheet substrate is conveyed in the first processing step is kept constant and the speed at which the sheet substrate is conveyed in the second processing step is kept constant.
 11. The device manufacturing method according to claim 8, wherein the coating layer is a photosensitive functional layer which is reformable in receipt of energy rays, the first processing step comprises: a depositing step for selectively or uniformly depositing the photosensitive functional layer having a thickness set under the first processing conditions on the surface of the sheet substrate, and a reforming step for creating the reformed portion and the non-reformed portion corresponding to the pattern on the photosensitive functional layer by irradiating the photosensitive functional layer with energy rays corresponding to the pattern.
 12. The device manufacturing method according to claim 11, wherein the photosensitive functional layer is one of photoresist reformed corresponding to the pattern by irradiation of ultraviolet rays as the energy rays, a photosensitive silane coupling agent reformed in hydrophilic and hydrophobic properties corresponding to the pattern by the irradiation of the ultraviolet rays, and a photosensitive reducing agent reformed so as to expose a plating reduction group.
 13. The device manufacturing method according to claim 12, wherein the second processing step implements removing processing in a case where the photosensitive functional layer is photoresist, and precipitating processing in a case where the photosensitive functional layer is the photosensitive silane coupling agent or the photosensitive reducing agent.
 14. The device manufacturing method according to claim 8, wherein the determining step measures the shape and dimensions of the pattern actually appeared on the sheet substrate by the second processing step, and determines whether errors in the measured shape and dimensions have the tendency of fluctuation exceeding an acceptable range set as a target. 